SIHG20N50C-E3

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SIHG20N50C-E3

MOSFET N-CH 500V 20A TO247AC

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Spécifications

Package Tube
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 500 V
Current-ContinuousDrain(Id)@25°C 20A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 270mOhm @ 10A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 76 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 2942 pF @ 25 V
PowerDissipation(Max) 250W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247AC

Vue d'ensemble

Description

The SIHG20N50C-E3 is a high-voltage, N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications. It features a maximum drain-source voltage (V_DS) of 500V and can handle a continuous drain current (I_D) of 20A. This device is suitable for various applications, including power supplies, motor drivers, and other high-voltage switching applications.
Key specifications include a low gate threshold voltage, fast switching speed, and low on-state resistance (R_DS(on)), which enhances efficiency in power conversion. The SIHG20N50C-E3 is particularly valued for its reliability and thermal performance, making it a popular choice in both consumer and industrial electronic circuits. It comes in a TO-220 package, allowing for effective heat dissipation during operation. Overall, this MOSFET is well-suited for applications requiring high voltage and efficient power management.

Features

The SIHG20N50C-E3 is an N-channel MOSFET designed for high-performance switching applications. Key features include:
- Voltage Rating: Supports a maximum drain-source voltage (V_ds) of 500V, making it suitable for high-voltage applications.
- Current Rating: Capable of handling a continuous drain current (I_d) of up to 20A, allowing it to drive significant loads.
- On-Resistance (R_ds(on)): Low on-resistance value minimizes conduction losses, improving efficiency during operation.
- Gate Threshold Voltage (V_gs(th)): Offers a suitable threshold voltage for efficient gate drive.
- Fast Switching Speed: Designed for fast switching, making it ideal for applications in power supplies, inverters, and motor drives.
- Package: Typically available in a TO-220 package, facilitating easy heat dissipation.
- Robustness: Built to withstand rugged conditions, ensuring reliability in demanding environments.
These features make the SIHG20N50C-E3 a strong choice for various power electronics applications.

Package

The SIHG20N50C-E3 is a high-voltage N-channel MOSFET packaged in a TO-247 format. This package type is designed for efficient thermal management and high power applications, providing robust performance in various electronic circuits.

Pinout

The SIHG20N50C-E3 is a high-voltage N-channel MOSFET manufactured by Vishay. It features a total of 3 pins.
Pin Configuration:
1. Gate (G) - This pin is used to control the MOSFET. Applying a voltage to the gate switches the device on or off.
2. Drain (D) - The drain pin is where the load is connected. The current flows from the drain to the source when the MOSFET is on.
3. Source (S) - The source pin is connected to ground or the lower potential in the circuit.
Key Specifications:
- Max V_DS (Drain-Source Voltage): 500V
- Max I_D (Continuous Drain Current): 20A at 25°C
- R_DS(on): Low on-resistance for efficient operation.
This MOSFET is commonly used in power switching applications, including power supplies, motor control, and inverters.

Manufacturer

The SIHG20N50C-E3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. The company specializes in products such as diodes, transistors, capacitors, resistors, and integrated circuits, serving a wide range of industries including automotive, industrial, consumer electronics, and telecommunications. Vishay is known for its innovation and high-quality standards, making it a prominent player in the electronics component market.

Application

The SIHG20N50C-E3 is an N-channel MOSFET suitable for high-voltage applications, primarily used in power supplies, motor control, and industrial automation. It excels in switching applications, such as inverters for renewable energy systems and electric vehicles. Its fast switching speed and high efficiency make it ideal for use in DC-DC converters, lighting controls, and other power management systems.

Equivalent

The SIHG20N50C-E3 is a 500V, 20A N-channel MOSFET. Equivalent products include:
1. IRF840
2. STP20NM50
3. MTP20N50E
Always verify specifications such as Vds, Id, and Rds(on) to ensure compatibility for your specific application.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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