SIC654CD-T1-GE3

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SIC654CD-T1-GE3

IC HALF BRIDGE DRIVER 50A PPAK

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  • Mfr. Partie #SIC654CD-T1-GE3
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Spécifications

Series VRPower®
Part Status Active
Output Configuration Half Bridge
Applications General Purpose
Interface Logic, PWM
Load Type Inductive, Capacitive, Resistive
Technology Power MOSFET
Current - Output / Channel 50A
Current - Peak Output 100A
Voltage - Supply 4.5V ~ 5.5V
Voltage - Load 24V
Operating Temperature -40°C ~ 150°C (TJ)
Features Bootstrap Circuit, Diode Emulation
Fault Protection Over Current, Over Temperature, Shoot-Through, UVLO
Mounting Type Surface Mount
Package / Case PowerPAK® MLP55-31L
Supplier Device Package PowerPAK® MLP55-31L
Base Product Number SIC654

Vue d'ensemble

Description

The SIC654CD-T1-GE3 is a high-performance MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient power management applications. Manufactured by Vishay, it features a low on-resistance, which minimizes power loss and enhances thermal performance. The device operates at a maximum drain-source voltage of 650V and can handle continuous drain currents up to 54A, making it suitable for power supplies, converters, and inverter designs.
This MOSFET is particularly known for its fast switching capabilities, which helps improve the efficiency of applications in automotive, industrial, and consumer electronics sectors. The SIC654CD-T1-GE3 is housed in a TO-220 package, facilitating easy thermal management and PCB integration. Its robust characteristics, along with a significant reduction in electromagnetic interference (EMI), make it an ideal choice for modern high-efficiency power electronics.

Features

The SIC654CD-T1-GE3 is a high-performance N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 650V.
2. Current Capacity: The continuous drain current (I_D) is rated up to 10A.
3. R_DS(on): It offers low on-resistance, enhancing efficiency with minimal power loss.
4. Gate Threshold Voltage: Features a low gate threshold voltage (V_GS(th)), allowing for easier drive requirements.
5. Fast Switching: Designed for rapid switching applications, reducing energy loss during operation.
6. Package Type: Comes in a TO-220 package, facilitating easy heat dissipation.
7. Applications: Ideal for use in power supplies, motor drives, and other high-voltage applications.
These features make the SIC654CD-T1-GE3 suitable for efficient power management in various electronic circuits.

Package

The SIC654CD-T1-GE3 is packaged in a DPAK (also known as TO-252) type package. This surface-mount package is designed for efficient heat dissipation and compact size, suitable for power management applications.

Pinout

The SIC654CD-T1-GE3 is a 6-pin power management IC primarily used for high-efficiency synchronous buck converters. The pin configuration is as follows:
1. VIN: Input voltage.
2. SW: Switch node for the internal MOSFET.
3. GND: Ground reference.
4. VOUT: Output voltage.
5. COMP: Compensation network connection for stability.
6. EN: Enable pin to turn the device on or off.
This IC is designed to deliver high performance in compact applications, with features such as adjustable output voltage, high efficiency, and built-in overcurrent protection.

Manufacturer

The SIC654CD-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a leading global manufacturer of discrete semiconductors and passive electronic components. The company specializes in a wide range of products, including resistors, capacitors, inductors, diodes, and MOSFETs, serving various industries such as automotive, industrial, computing, consumer electronics, and telecommunications. Vishay is known for its innovation and commitment to quality, providing components that enhance performance in electronic systems worldwide.

Application

The SIC654CD-T1-GE3 is a silicon carbide (SiC) MOSFET transistor used in various high-efficiency applications, including electric vehicles, renewable energy systems (like solar inverters), industrial motor drives, and power supplies. Its high-temperature and high-voltage capabilities make it suitable for demanding environments, offering improved performance and energy savings in power conversion and management systems.

Equivalent

The SIC654CD-T1-GE3 is a MOSFET driver. Equivalent products include the MIC4427, TC4420, and FAN3100. These devices provide similar functions for driving MOSFETs and are suitable for various applications. Always verify specifications to ensure compatibility for your specific application needs.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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