SIA437DJ-T1-GE3

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SIA437DJ-T1-GE3

MOSFET P-CH 20V 29.7A PPAK SC70

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Spécifications

Supplier Vishay Siliconix
Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 20 V
Current-ContinuousDrain(Id)@25°C 29.7A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 1.5V, 4.5V
RdsOn(Max)@IdVgs 14.5mOhm @ 8A, 4.5V
Vgs(th)(Max)@Id 900mV @ 250µA
GateCharge(Qg)(Max)@Vgs 90 nC @ 8 V
Vgs(Max) ±8V
InputCapacitance(Ciss)(Max)@Vds 2340 pF @ 10 V
PowerDissipation(Max) 3.5W (Ta), 19W (Tc)
OperatingTemperature -50°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® SC-70-6

Vue d'ensemble

Description

The SIA437DJ-T1-GE3 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. It features a low on-resistance (RDS(on)), which minimizes power loss and heat generation, making it suitable for DC-DC converters, power management circuits, and other switching applications. With a voltage rating typically around 30V and a continuous drain current of up to 50A, it is ideal for consumer electronics, automotive, and industrial systems.
The SIA437DJ-T1-GE3 is packaged in a compact surface-mount format, facilitating easy integration into circuit designs while optimizing space. Its fast switching capabilities enhance performance in high-frequency applications. Additionally, this MOSFET is designed to operate within a wide temperature range, ensuring reliability under various environmental conditions.
Overall, the SIA437DJ-T1-GE3 is a versatile choice for engineers looking to improve efficiency and performance in their electronic designs.

Features

The SIA437DJ-T1-GE3 is a N-channel MOSFET designed for high-efficiency applications. Key features include:
- Voltage Rating: Operates at a drain-source voltage (V_DS) of 30V.
- Current Rating: Supports continuous drain current (I_D) of up to 60A, making it suitable for high-power applications.
- R_DS(on): Low on-resistance (R_DS(on)) typically around 0.015Ω, which enhances efficiency and minimizes power loss during operation.
- Gate Threshold Voltage: V_GS(th) ranges from 1V to 3V, allowing for easy integration in low-voltage circuits.
- Package Type: Available in a compact DPAK package, facilitating space-saving designs and improved thermal performance.
- Fast Switching: Features fast switching speeds suitable for applications like DC-DC converters and motor control.
- Applications: Ideal for use in power management, automotive, and industrial applications.
Overall, the SIA437DJ-T1-GE3 combines performance, efficiency, and compact design, catering to a range of modern electronic applications.

Package

The SIA437DJ-T1-GE3 is a N-channel MOSFET packaged in a SO-8 (Small Outline) form factor. This package type is designed for efficient heat dissipation and compact circuit layouts, making it suitable for various applications in power management and switching.

Pinout

The SIA437DJ-T1-GE3 is a dual N-channel MOSFET with a pin count of 6. Its primary functions include switching and amplifying electronic signals in various applications, such as power management and motor control.
The pin configuration is as follows:
1. Gate (G1) - Gate terminal for the first MOSFET.
2. Drain (D1) - Drain terminal for the first MOSFET.
3. Source (S1) - Source terminal for the first MOSFET.
4. Gate (G2) - Gate terminal for the second MOSFET.
5. Drain (D2) - Drain terminal for the second MOSFET.
6. Source (S2) - Source terminal for the second MOSFET.
This MOSFET is designed for low voltage applications and operates efficiently with low on-resistance, making it suitable for a variety of electronic circuits.

Manufacturer

The SIA437DJ-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. Founded in 1962, the company is known for its diverse product offerings, which include diodes, resistors, capacitors, and other electronic components used in various applications across multiple industries, such as automotive, consumer electronics, industrial, and telecommunications. Vishay operates worldwide and is recognized for its commitment to innovation, quality, and reliability in the electronics sector.

Application

The SIA437DJ-T1-GE3 is a dual N-channel MOSFET designed for various applications, including power management, DC-DC converters, and load switching. It is suitable for use in consumer electronics, automotive, and industrial equipment due to its high efficiency, low on-resistance, and fast switching capabilities. Additionally, it can be utilized in renewable energy systems and battery management applications.

Equivalent

The SIA437DJ-T1-GE3 is a dual N-channel MOSFET. Equivalent products include the BSS138, 2N7000, and IRF3708, depending on specific application requirements like voltage and current ratings. Always verify specifications such as Rds(on), Vgs, and package type to ensure compatibility.

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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