SI9945BDY-T1-GE3

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SI9945BDY-T1-GE3

MOSFET 2N-CH 60V 5.3A 8-SOIC

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType 2 N-Channel (Dual)
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 60V
Current-ContinuousDrain(Id)@25°C 5.3A
RdsOn(Max)@IdVgs 58mOhm @ 4.3A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 20nC @ 10V
InputCapacitance(Ciss)(Max)@Vds 665pF @ 15V
Power-Max 3.1W
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 8-SOIC (0.154, 3.90mm Width)

Vue d'ensemble

Description

The SI9945BDY-T1-GE3 is a high-performance, low-voltage N-channel MOSFET designed for efficient power management applications. With a maximum drain-source voltage (V_DSS) of 30V and a continuous drain current (I_D) rating of up to 45A, it is suitable for use in a variety of applications including power supplies, motor drives, and DC-DC converters.
This MOSFET features low on-resistance (R_DS(on)), which minimizes conduction losses and improves overall efficiency. Its fast switching speeds make it ideal for high-frequency applications. The device comes in a compact surface-mount package, facilitating easy integration into circuit designs.
The SI9945BDY-T1-GE3 is also characterized by its thermal performance, allowing for reliable operation across a range of environmental conditions. It is RoHS compliant, making it an eco-friendly choice for modern electronic designs. Overall, this MOSFET is a reliable component for engineers looking to enhance the performance and efficiency of their electronic systems.

Features

The SI9945BDY-T1-GE3 is a high-speed, low on-resistance N-channel MOSFET designed for power management applications. Key features include:
- Voltage Rating: 30V maximum drain-source voltage (V_DS).
- Current Rating: Can handle continuous drain current up to 30A.
- On-Resistance (R_DS(on)): Low on-resistance of approximately 10 mΩ at V_GS = 10V, which minimizes conduction losses.
- Gate Charge (Q_g): Low gate charge, facilitating fast switching speeds and improved efficiency.
- Package Type: Offered in a compact SO-8 package, suitable for space-constrained applications.
- Thermal Resistance: Good thermal performance with low junction-to-ambient thermal resistance.
- Applications: Ideal for power management, DC-DC converters, and other switching applications.
This combination of features makes the SI9945BDY-T1-GE3 suitable for various consumer electronics and industrial applications requiring efficient power handling.

Package

The SI9945BDY-T1-GE3 is packaged in a SOIC-8 (Small Outline Integrated Circuit) format. This package type features an 8-pin configuration, suitable for surface mounting on printed circuit boards.

Pinout

The SI9945BDY-T1-GE3 is a N-channel MOSFET from Vishay, packaged in a DPAK (TO-252) with a total of 3 pins. The pin functions are as follows:
1. Gate (G): This pin controls the MOSFET's on/off state. A voltage applied to the gate allows current to flow from the drain to the source.

2. Drain (D): The drain is the terminal through which current flows into the MOSFET when it is turned on.
3. Source (S): The source is the terminal through which current exits the MOSFET.
The SI9945BDY-T1-GE3 is optimized for high-speed switching and is commonly used in power management applications.

Manufacturer

The SI9945BDY-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a prominent American company that specializes in the design and production of discrete semiconductors and passive electronic components. Founded in 1962, it serves a wide range of industries, including automotive, industrial, computing, consumer electronics, and telecommunications. Vishay is known for its innovative solutions in various electronic applications, offering products such as diodes, resistors, capacitors, and sensors. The company is recognized for its commitment to quality and reliability, making it a key player in the global electronics market.

Application

The SI9945BDY-T1-GE3 is a high-speed, low-voltage MOSFET driver used in various applications, including power management systems, DC-DC converters, synchronous rectification, and motor control. It is particularly suitable for driving high-frequency power switches in battery-powered devices, consumer electronics, and industrial equipment, offering improved efficiency and performance in switching applications.

Equivalent

The SI9945BDY-T1-GE3 is a high-speed, low-voltage N-channel MOSFET. Equivalent products include the BSS138, 2N7000, and SI9945DY-T1-GE3. However, it’s essential to check specific parameters like voltage, current rating, RDS(on), and package type to ensure compatibility for your application. Always refer to the manufacturer’s datasheets for the most accurate comparisons.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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