SI9926CDY-T1-GE3

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SI9926CDY-T1-GE3

MOSFET 2N-CH 20V 8A 8-SOIC

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Spécifications

Supplier Vishay Siliconix
Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType 2 N-Channel (Dual)
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 20V
Current-ContinuousDrain(Id)@25°C 8A
RdsOn(Max)@IdVgs 18mOhm @ 8.3A, 4.5V
Vgs(th)(Max)@Id 1.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 33nC @ 10V
InputCapacitance(Ciss)(Max)@Vds 1200pF @ 10V
Power-Max 3.1W
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 8-SOIC (0.154, 3.90mm Width)

Vue d'ensemble

Description

The SI9926CDY-T1-GE3 is a high-performance, integrated MOSFET driver designed for driving N-channel MOSFETs in various applications such as power management, motor control, and DC-DC converters. It features a high peak output current capability, typically around 2 A, which enables rapid switching and minimizes switching losses. The driver operates with a wide supply voltage range, making it versatile for different power levels.
Key features include low propagation delay, adjustable rise and fall times, and a built-in under-voltage lockout (UVLO) function for enhanced reliability. The device is packaged in a compact surface-mount format, facilitating easy integration into space-constrained designs. Additionally, its robust thermal performance ensures reliable operation under demanding conditions.
The SI9926CDY-T1-GE3 is ideal for applications requiring efficient power conversion and precise control of MOSFETs, contributing to overall system efficiency and reliability.

Features

The SI9926CDY-T1-GE3 is a high-performance N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 30V, making it suitable for low to medium voltage applications.
2. Current Rating: Capable of handling continuous drain currents of up to 6.6A, which can be higher with proper thermal management.
3. Low R_DS(on): Offers a low on-resistance (R_DS(on)) of approximately 12.5 mΩ at V_GS = 10V, enhancing efficiency by reducing power loss during operation.
4. Fast Switching: Optimized for quick switching applications, reducing transition losses in high-frequency applications.
5. Thermal Performance: Enhanced thermal stability with a maximum junction temperature of 150°C, ensuring reliability in demanding environments.
6. Package: Available in a compact SO-8 package, facilitating space-saving designs.
These features make the SI9926CDY-T1-GE3 suitable for use in various electronic devices, including power supplies, motor drivers, and LED drivers.

Package

The SI9926CDY-T1-GE3 is packaged in a SOIC-8 (Small Outline Integrated Circuit) format. This package type features an 8-pin configuration and is suitable for surface-mount applications.

Pinout

The SI9926CDY-T1-GE3 is a dual-channel, low-side MOSFET driver. It features a pin count of 8.
The pin functions are as follows:
1. GND: Ground reference for the device.
2. VDD: Supply voltage input for the driver.
3. IN1: Input signal for channel 1 to control the gate of the MOSFET.
4. OUT1: Output to drive the gate of the MOSFET for channel 1.
5. IN2: Input signal for channel 2 to control the gate of another MOSFET.
6. OUT2: Output to drive the gate of the MOSFET for channel 2.
7. NC: No connect; not used and should be left open.
8. NC: Another No connect; not used and should also be left open.
The SI9926CDY-T1-GE3 is suitable for applications requiring efficient gate driving for power MOSFETs in various power management circuits.

Manufacturer

The SI9926CDY-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global leader in the production of discrete semiconductors and passive electronic components. The company designs and manufactures a wide array of products, including diodes, resistors, capacitors, inductors, and optoelectronics, catering to various industries such as automotive, industrial, consumer electronics, and telecommunications. Vishay is known for its commitment to innovation and quality, providing essential components for advanced electronic applications.

Application

The SI9926CDY-T1-GE3 is a dual N-channel MOSFET driver primarily used in applications such as motor control, power management, and switching power supplies. Its features make it suitable for driving high-speed MOSFETs in DC-DC converters and inverters, as well as in lighting control, automotive electronics, and consumer electronics. Its ability to handle high currents and voltages enhances efficiency and performance in these applications.

Equivalent

The SI9926CDY-T1-GE3 is a high-speed, low-voltage MOSFET driver. Equivalent products include the MIC4427, TC4420, and MAX4420, which offer similar performance in driving MOSFETs with low output impedance and high-speed switching capabilities. Always check the specifications for voltage, current ratings, and package types to ensure compatibility.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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