SI7738DP-T1-GE3

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SI7738DP-T1-GE3

MOSFET N-CH 150V 30A PPAK SO-8

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Spécifications

Supplier Vishay Siliconix
Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 150 V
Current-ContinuousDrain(Id)@25°C 30A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 38mOhm @ 7.7A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 53 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 2100 pF @ 75 V
PowerDissipation(Max) 5.4W (Ta), 96W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® SO-8

Vue d'ensemble

Description

The SI7738DP-T1-GE3 is a N-channel MOSFET designed for power management applications. It features low on-resistance and fast switching speeds, making it suitable for use in DC-DC converters, power management circuits, and other high-efficiency applications. The device is housed in a compact SO-8 package, which allows for efficient space utilization on circuit boards.
With a maximum continuous drain current of around 30A and a drain-source voltage rating of 30V, the SI7738DP-T1-GE3 is capable of handling significant power loads while maintaining thermal stability. Its low gate threshold voltage enables it to operate effectively in low-voltage applications.
This MOSFET is widely used in consumer electronics, automotive, and industrial applications due to its reliability and performance. Additionally, it is RoHS compliant, ensuring it meets environmental regulations. Overall, the SI7738DP-T1-GE3 is a versatile component for efficient power management solutions.

Features

The SI7738DP-T1-GE3 is a high-performance N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: It has a drain-source voltage (V_DS) of up to 30V, making it suitable for low-voltage applications.
2. Current Rating: The continuous drain current (I_D) is typically around 30A, allowing for efficient power handling.
3. Low On-Resistance: With a maximum R_DS(on) of about 6.5 mΩ at 10V gate drive voltage, it offers low power loss and high efficiency.
4. Fast Switching Speed: The device features fast switching characteristics, facilitating high-frequency operation.
5. Thermal Performance: It has a high maximum junction temperature of 150°C, supporting a wide operating range.
6. Package Type: Available in a DPAK package, suitable for surface mount applications.
7. Applications: Commonly used in DC-DC converters, power supplies, and motor control circuits.
Overall, the SI7738DP-T1-GE3 is an efficient and robust option for modern electronic designs.

Package

The SI7738DP-T1-GE3 is packaged in a dual flat no-lead (DFN) package, specifically a 3 mm x 3 mm, 8-pin configuration. This package type is designed for surface mounting and provides efficient thermal performance and reduced footprint.

Pinout

The SI7738DP-T1-GE3 is a N-channel MOSFET from Vishay Siliconix. It features a total of 8 pins. The main functions of each pin are as follows:
1. Gate (G): Controls the switching of the MOSFET. Voltage applied here turns the device on or off.
2. Drain (D): The output terminal where the load is connected. Current flows from drain to source when the MOSFET is on.
3. Source (S): The terminal through which current enters the MOSFET.
The specific pin configuration is as follows:
1. Gate
2. Drain
3. Source
4. Gate
5. Drain
6. Source
7. Source
8. Drain
This device is commonly used in power management applications due to its low on-resistance and fast switching capabilities. It supports high performance in various circuits, including power supplies and motor control.

Manufacturer

The SI7738DP-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. Founded in 1962, the company is known for its wide range of products, including diodes, transistors, capacitors, resistors, and inductors, serving various industries such as automotive, industrial, consumer electronics, and telecommunications. Vishay's extensive portfolio supports applications that require high reliability and performance. The SI7738DP-T1-GE3 itself is a N-channel MOSFET, designed for efficient switching and power management in electronic circuits.

Application

The SI7738DP-T1-GE3 is a N-channel MOSFET primarily used in applications such as power management, DC-DC converters, motor control, and battery management systems. Its high efficiency and low on-resistance make it suitable for switching applications in consumer electronics, industrial equipment, and automotive systems.

Equivalent

The SI7738DP-T1-GE3 is a N-channel MOSFET. Equivalent products include the FDS6910, BSS138, and IRLZ44N. When selecting an equivalent, ensure the voltage, current ratings, RDS(on), and package type match or exceed the specifications of the SI7738DP-T1-GE3 for compatibility.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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