SI7625DN-T1-GE3

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SI7625DN-T1-GE3

MOSFET P-CH 30V 35A PPAK1212-8

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 35A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 7mOhm @ 15A, 10V
Vgs(th)(Max)@Id 2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 126 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 4427 pF @ 15 V
PowerDissipation(Max) 3.7W (Ta), 52W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® 1212-8

Vue d'ensemble

Description

The SI7625DN-T1-GE3 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient power management and switching applications. It features a low R_DS(on) (drain-source on-resistance) which minimizes power loss during operation, making it suitable for high-efficiency circuits. The device supports a maximum drain-source voltage (V_DS) of 25V and can handle continuous drain currents up to 60A, depending on the application conditions.
This MOSFET is commonly used in applications such as DC-DC converters, load switches, and motor control due to its fast switching speed and high thermal performance. The part is packaged in a compact TO-220 case, which aids in effective heat dissipation. Its gate threshold voltage (V_GS(th)) ranges from 1V to 2.5V, which allows for easy drive with standard logic levels.
Overall, the SI7625DN-T1-GE3 is a versatile component ideal for modern power electronics design, promoting efficiency and reliability in various electronic systems.

Features

The SI7625DN-T1-GE3 is a dual N-channel MOSFET optimized for high-speed switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 25V, making it suitable for a variety of low-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 30A, facilitating significant power handling.
3. Low R_DS(on): It offers a low on-resistance (R_DS(on)), typically around 8.5 mΩ at V_GS of 10V, ensuring efficient performance and reduced heat generation.
4. Fast Switching Speed: Designed for quick switching, ideal for applications like power management and DC-DC converters.
5. Package: It comes in a compact SO-8 package, allowing for space-efficient designs.
6. Thermal Performance: Good thermal conductivity, facilitating high-efficiency operation and reliability.
These features make the SI7625DN-T1-GE3 suitable for various applications, including power supplies, motor drives, and LED drivers.

Package

The SI7625DN-T1-GE3 is packaged in a 5-lead SOT-23 package. This surface-mount package is commonly used for transistors and other semiconductor devices, offering a compact design suitable for various electronic applications.

Pinout

The SI7625DN-T1-GE3 is a N-channel MOSFET with a total of 8 pins. Its primary functions include acting as a switch in power management applications, providing high-speed performance, and enabling low on-resistance for efficient power handling. The key pins include:
1. Gate (G): Controls the MOSFET's operation (turns it on/off).
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The input terminal that connects to ground or the negative side of the circuit.
4. Body Diode (integrated within the structure): Allows current flow in the reverse direction.
This device is commonly used in applications such as DC-DC converters, motor drivers, and power switches in consumer electronics. It features low RDS(on) and fast switching speeds, making it suitable for various power management scenarios.

Manufacturer

The manufacturer of the SI7625DN-T1-GE3 is Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. Founded in 1962, the company operates in various sectors, including automotive, industrial, telecommunications, consumer, and military markets. Vishay is recognized for its extensive portfolio of products, which includes MOSFETs, diodes, resistors, capacitors, and inductors. With a focus on innovation and reliability, Vishay plays a significant role in the electronics industry, providing components that are essential for a wide range of electronic applications.

Application

The SI7625DN-T1-GE3 is a N-channel MOSFET commonly used in applications such as power management, DC-DC converters, load switching, and battery management systems. Its low on-resistance and fast switching capabilities make it suitable for consumer electronics, automotive applications, and industrial equipment.

Equivalent

The SI7625DN-T1-GE3 is a N-channel MOSFET. Equivalent products include the AO3400, IRLZ44N, and BSS138. Always verify specifications such as voltage, current ratings, and Rds(on) for compatibility in your application.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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