SI7617DN-T1-GE3

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SI7617DN-T1-GE3

MOSFET P-CH 30V 35A PPAK1212-8

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 35A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 12.3mOhm @ 13.9A, 10V
Vgs(th)(Max)@Id 2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 59 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 1800 pF @ 15 V
PowerDissipation(Max) 3.7W (Ta), 52W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® 1212-8

Vue d'ensemble

Description

The SI7617DN-T1-GE3 is a N-channel MOSFET designed for efficient power management in various applications, including DC-DC converters, motor control, and load switching. It features a low on-resistance (RDS(on)) for reduced conduction losses, making it suitable for high-efficiency designs. With a maximum drain-source voltage (VDS) of 30V and a continuous drain current (ID) of up to 60A, it can handle significant power loads.
The device typically comes in a compact SO-8 package, facilitating space-saving designs in consumer electronics and industrial applications. It also supports fast switching speeds, which is advantageous in applications requiring high-frequency operation. The SI7617DN-T1-GE3 is characterized by its robustness and thermal performance, essential for reliable operation in demanding environments. As a part of the Vishay brand, it adheres to high manufacturing standards and is commonly used in automotive, telecommunications, and power supply sectors.

Features

The SI7617DN-T1-GE3 is a N-channel MOSFET that is designed for high-efficiency power management applications. Key features include:
- Voltage Rating: It has a maximum drain-to-source voltage (V_DS) of 30V, making it suitable for various low-voltage applications.
- Current Rating: The device can handle continuous drain currents up to 60A, providing high power capability.
- R_DS(on): It offers low on-resistance, typically around 5.5 mΩ, ensuring reduced power loss and improved thermal performance.
- Fast Switching Speed: The MOSFET supports high-speed switching, ideal for applications such as DC-DC converters and power supplies.
- Thermal Performance: It features a robust thermal package that aids in efficient heat dissipation.
- Package Type: The Si7617DN is available in a compact SO-8 package, facilitating space-saving designs.
These features make the SI7617DN-T1-GE3 suitable for various applications, including automotive, industrial, and consumer electronics.

Package

The SI7617DN-T1-GE3 is packaged in a SOIC-8 (Small Outline Integrated Circuit) format. This surface-mount package features eight pins and is designed for efficient use of space on printed circuit boards.

Pinout

The SI7617DN-T1-GE3 is a dual N-channel MOSFET manufactured by Vishay. It comes in a 6-lead TSOP-6 package. The pin configuration includes:
1. Gate 1 (G1) - Input for controlling MOSFET 1.
2. Drain 1 (D1) - Output for MOSFET 1, connected to the load.
3. Source 1 (S1) - Source terminal for MOSFET 1, typically connected to ground.
4. Gate 2 (G2) - Input for controlling MOSFET 2.
5. Drain 2 (D2) - Output for MOSFET 2, connected to the load.
6. Source 2 (S2) - Source terminal for MOSFET 2, also generally connected to ground.
The device is designed for low on-resistance and high-speed switching applications, making it suitable for power management and load switching in various electronic circuits.

Manufacturer

The manufacturer of the SI7617DN-T1-GE3 is Silicon Labs, also known as Silicon Laboratories Inc. Silicon Labs is a semiconductor company that specializes in developing high-performance, integrated circuits and wireless solutions. Founded in 1996, the company focuses on various markets, including the Internet of Things (IoT), automotive, industrial automation, and communications. Their product offerings include microcontrollers, analog and mixed-signal devices, and wireless technology, catering to a wide range of applications in embedded systems. Silicon Labs is known for its innovative solutions that enable connectivity and efficiency in electronic devices.

Application

The SI7617DN-T1-GE3 is a N-channel MOSFET primarily used in power management applications. Its application areas include synchronous rectification in power supplies, load switching in DC-DC converters, motor control, and battery management systems. It is also suitable for use in high-frequency and high-efficiency designs, such as LED drivers and portable devices.

Equivalent

The SI7617DN-T1-GE3 is a N-channel MOSFET. Equivalent products include the BSS138, IRLZ44N, and BS170, depending on specific requirements such as voltage, current ratings, and package type. Always verify specifications to ensure compatibility with your application.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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