SI7615ADN-T1-GE3

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SI7615ADN-T1-GE3

MOSFET P-CH 20V 35A PPAK1212-8

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 20 V
Current-ContinuousDrain(Id)@25°C 35A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 2.5V, 10V
RdsOn(Max)@IdVgs 4.4mOhm @ 20A, 10V
Vgs(th)(Max)@Id 1.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 183 nC @ 10 V
Vgs(Max) ±12V
InputCapacitance(Ciss)(Max)@Vds 5590 pF @ 10 V
PowerDissipation(Max) 3.7W (Ta), 52W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® 1212-8

Vue d'ensemble

Description

The SI7615ADN-T1-GE3 is a high-speed, N-channel MOSFET designed for various applications, including power management and signal switching. It features low on-resistance and fast switching capabilities, making it suitable for efficient power conversion in devices such as DC-DC converters and motor drivers. This MOSFET is built using advanced semiconductor technology, ensuring high performance and reliability.
Key specifications include a maximum drain-source voltage (V_DS) of 30V, continuous drain current (I_D) of 25A, and a low R_DS(on), which minimizes power losses during operation. Its compact package allows for easy integration into circuit boards, making it a preferred choice for engineers in consumer electronics, automotive, and industrial applications.
Additionally, the SI7615ADN-T1-GE3 is RoHS compliant, ensuring it meets environmental standards. Overall, this MOSFET is an effective solution for enhancing energy efficiency and performance in modern electronic designs.

Features

The SI7615ADN-T1-GE3 is a N-channel MOSFET designed for high-efficiency power management applications. Key features include:
1. Voltage Rating: Maximum drain-to-source voltage (V_DS) of 30V.
2. Current Capability: Continuous drain current (I_D) up to 70A, allowing for robust performance in high-load situations.
3. Low R_DS(on): Ultra-low on-resistance (R_DS(on) typically around 4.5 mΩ), reducing power loss and enhancing thermal efficiency.
4. Fast Switching: High-speed switching capabilities make it suitable for applications in both synchronous rectification and DC-DC converters.
5. Package Type: Available in a compact SO-8 package, ideal for space-constrained designs.
6. Thermal Performance: Excellent thermal performance with a high maximum junction temperature (T_j) of 150°C.
These attributes make the SI7615ADN-T1-GE3 suitable for applications in automotive, industrial, and consumer electronics, contributing to efficient energy conversion and management.

Package

The SI7615ADN-T1-GE3 is packaged in a 3x3 mm, 8-lead QFN (Quad Flat No-lead) configuration. This compact package type is designed for efficient thermal performance and space-saving in electronic applications.

Pinout

The SI7615ADN-T1-GE3 is a N-channel MOSFET with a total of 8 pins. Its primary functions include serving as a high-speed switching device for various applications such as power management and load switching. It is designed to handle high voltage and current levels, making it suitable for a range of electronic circuits.
The pin configuration typically includes:
1. Gate (G) - Controls the MOSFET switching.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - The terminal that connects to ground or the negative side of the power supply.
4. Body Diode - Internal body diode for reverse current capability.
This device offers low on-resistance and fast switching speeds, making it ideal for use in power supplies, battery management systems, and automotive applications.

Manufacturer

The SI7615ADN-T1-GE3 is manufactured by Skyworks Solutions, Inc. Skyworks is a publicly traded company that specializes in analog and mixed-signal semiconductors. They focus on wireless communications and provide a range of products including power amplifiers, front-end solutions, and RF components. Skyworks serves various markets such as mobile devices, automotive, and Internet of Things (IoT) applications. The company is known for its expertise in radio frequency technologies and its contributions to enabling wireless connectivity in numerous applications.

Application

The SI7615ADN-T1-GE3 is a N-channel MOSFET primarily used in power management applications, including DC-DC converters, load switching, and motor control. Its low ON-resistance and high-speed switching capabilities make it suitable for battery-operated devices, power supplies, and RF applications. Additionally, it can be utilized in automotive and industrial systems where efficient power handling is essential.

Equivalent

The SI7615ADN-T1-GE3 is a N-channel MOSFET. Equivalent products include the Infineon IPP60R039P6, Vishay SiR662DP, and the ON Semiconductor NTMFS5C620NL. Be sure to check specifications like V_DS, I_D, R_DS(on), and package type for compatibility.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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