SI7613DN-T1-GE3

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SI7613DN-T1-GE3

MOSFET P-CH 20V 35A PPAK1212-8

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Spécifications

Supplier Vishay Siliconix
Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 20 V
Current-ContinuousDrain(Id)@25°C 35A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 8.7mOhm @ 17A, 10V
Vgs(th)(Max)@Id 2.2V @ 250µA
GateCharge(Qg)(Max)@Vgs 87 nC @ 10 V
Vgs(Max) ±16V
InputCapacitance(Ciss)(Max)@Vds 2620 pF @ 10 V
PowerDissipation(Max) 3.8W (Ta), 52.1W (Tc)
OperatingTemperature -50°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® 1212-8

Vue d'ensemble

Description

The SI7613DN-T1-GE3 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay. It is designed for high-efficiency power management applications, such as DC-DC converters, power supplies, and motor control. This MOSFET features a low on-resistance, which minimizes power loss during operation and helps increase overall efficiency.
Key specifications include a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of up to 62A, depending on the thermal conditions. It also boasts a fast switching speed, making it suitable for high-frequency applications. The SI7613DN-T1-GE3 is packaged in a compact PowerPAK® SO-8 footprint, which aids in thermal management and space-saving designs.
It is RoHS compliant, indicating that it is free from hazardous substances, making it environmentally friendly. Overall, the SI7613DN-T1-GE3 is a reliable choice for designers looking to enhance performance and efficiency in power electronics.

Features

The SI7613DN-T1-GE3 is a N-channel MOSFET designed for efficient power management in various applications. Key features include:
- Voltage Rating: Supports a drain-source voltage (V_DS) of up to 30V.
- Current Handling: Capable of handling continuous drain currents (I_D) up to 60A, making it suitable for high-power applications.
- R_DS(on): Low on-resistance (R_DS(on)) of approximately 8.5 mΩ at a gate-source voltage (V_GS) of 10V, which minimizes power loss and heat generation.
- Fast Switching: Designed for high-speed switching, enhancing performance in applications such as DC-DC converters and motor drivers.
- Thermal Performance: Features a robust thermal design to handle significant power dissipation.
- Package: Available in a TO-220 package, facilitating easier heat management and mounting options.
- Applications: Commonly used in automotive systems, power supplies, and industrial motor control.
Overall, the SI7613DN-T1-GE3 is suitable for applications requiring reliable high-efficiency power switching.

Package

The SI7613DN-T1-GE3 is packaged in a SOIC-8 (Small Outline Integrated Circuit) format. This package type features an 8-pin configuration suitable for surface mounting, allowing for efficient thermal performance and compact circuit design.

Pinout

The SI7613DN-T1-GE3 is a N-channel MOSFET with a total of 6 pins. The primary functions of its pins are as follows:
1. Gate (G): Controls the MOSFET operation; turning it on or off based on the voltage applied.
2. Drain (D): The output terminal where the load is connected; carries the current when the MOSFET is on.
3. Source (S): The input terminal from where the current enters when the MOSFET is conducting.
The pin configuration typically follows a standard layout for surface-mount packages, with the specific arrangement detailed in the manufacturer's datasheet. This device is designed for high-speed switching applications and is commonly used in power management systems. Always refer to the datasheet for full specifications and electrical characteristics.

Manufacturer

The SI7613DN-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global company known for its production of electronic components, including semiconductors, passive components, and other electronic devices. Founded in 1962, it is recognized for its innovation in technology and extensive portfolio, which caters to various industries such as automotive, industrial, consumer electronics, and telecommunications. Vishay operates in multiple countries and is one of the largest manufacturers in the electronics components market, focusing on high-quality and reliable products.

Application

The SI7613DN-T1-GE3 is a N-channel MOSFET designed for applications such as power management, load switching, and DC-DC converters. Its low on-resistance and fast switching capabilities make it suitable for automotive, industrial, and consumer electronics, particularly in power supply circuits and motor control systems.

Equivalent

The SI7613DN-T1-GE3 is a dual N-channel MOSFET. Equivalent products include the IRF3708, BSS138, and AO3400. However, always verify specifications such as V_DS, I_D, and R_DS(on) to ensure compatibility based on your application requirements. Always consult the datasheets for detailed comparisons.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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