SI7465DP-T1-E3

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SI7465DP-T1-E3

MOSFET P-CH 60V 3.2A PPAK SO-8

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 3.2A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 64mOhm @ 5A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 40 nC @ 10 V
Vgs(Max) ±20V
PowerDissipation(Max) 1.5W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® SO-8

Vue d'ensemble

Description

The SI7465DP-T1-E3 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient power management applications. It features a low on-resistance, allowing for high efficiency in switching applications, which is critical in reducing power loss and heat generation. The device has a voltage rating of 60V and a continuous drain current rating of 30A, making it suitable for various applications such as power supplies, motor control, and DC-DC converters.
Key specifications include a low gate threshold voltage, fast switching capabilities, and a compact surface-mount package (SO-8), which aids in space-saving designs. Its robust performance characteristics and reliability make it an ideal choice for modern electronic applications where efficiency and thermal performance are crucial. The SI7465DP-T1-E3 is part of a larger family of MOSFETs that cater to varying power and efficiency needs across different industries.

Features

The SI7465DP-T1-E3 is a N-channel MOSFET designed for high-efficiency power management applications. Key features include:
1. Low On-Resistance (RDS(on)): Offers low on-state resistance, enhancing efficiency and reducing heat generation during operation.
2. High Voltage Rating: Capable of handling drain-source voltages up to 30V, making it suitable for various applications.
3. Fast Switching Speed: Enables rapid turn-on and turn-off, which is essential for efficient switching applications.
4. Compact Package: Available in a DPAK package that saves PCB space and simplifies design layouts.
5. Thermal Performance: Designed with good thermal characteristics, allowing for effective heat dissipation.
6. Applications: Ideal for use in DC-DC converters, power management systems, and other applications requiring efficient switching.
These features make the SI7465DP-T1-E3 a versatile choice for engineers seeking reliable performance in power electronics.

Package

The SI7465DP-T1-E3 is packaged in a SOIC-8 (Small Outline Integrated Circuit, 8-pin) format. This surface-mount package is designed for efficient thermal performance and space-saving applications.

Pinout

The SI7465DP-T1-E3 is a N-channel MOSFET with a pin count of 8. Its primary function is to serve as a power switch in various applications, including power management, motor control, and load switching.
The pin configuration is as follows:
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - The output where the load is connected.
3. Source (S) - The common terminal for the input and output connections.
4. Drain (D) - Additional drain pin, sometimes used for thermal management or redundancy.
The device features low on-resistance and fast switching speeds, making it suitable for high-efficiency applications. It is often used in circuits requiring low voltage drop and high current handling.

Manufacturer

The SI7465DP-T1-E3 is manufactured by Silicon Labs, a semiconductor company known for its innovative solutions in the fields of analog, mixed-signal, microcontroller, and wireless technologies. Founded in 1996 and headquartered in Austin, Texas, Silicon Labs specializes in developing integrated circuits and software for a variety of applications, including IoT (Internet of Things), automotive, industrial, and consumer electronics. The company is recognized for its commitment to enabling connectivity and efficiency in electronic designs through its advanced technology and product offerings. Silicon Labs is publicly traded and serves a global market, providing products that are used in diverse applications across multiple industries.

Application

The SI7465DP-T1-E3 is a N-channel MOSFET used in various applications including power management, load switching, and motor control. Its low on-resistance and high efficiency make it suitable for DC-DC converters, battery management systems, and portable devices. Additionally, it can be used in automotive, industrial automation, and consumer electronics for efficient power handling and thermal management.

Equivalent

The SI7465DP-T1-E3 is a N-channel MOSFET. Equivalent products include the BSS123, AO3400, and IRF540. For precise replacements, consider parameters like V_DS, I_D, and R_DS(on) to ensure compatibility in your specific application. Always verify with the manufacturer's datasheets for exact specifications.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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