SI7454DDP-T1-GE3

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SI7454DDP-T1-GE3

MOSFET N-CH 100V 21A PPAK SO-8

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Spécifications

Supplier Vishay Siliconix
Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 21A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 33mOhm @ 10A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 19.5 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 550 pF @ 50 V
PowerDissipation(Max) 4.1W (Ta), 29.7W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® SO-8

Vue d'ensemble

Description

The SI7454DDP-T1-GE3 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching applications. With a maximum drain-source voltage (V_DS) of 40V and a continuous drain current (I_D) rating of 55A, it is suitable for power management in various electronic devices. The device features a low on-resistance (R_DS(on)), typically around 4.5 mΩ, which minimizes power losses during operation, enhancing overall efficiency.
Packaged in a DPAK (TO-252) format, it offers good thermal performance, making it ideal for applications such as power supplies, motor drives, and DC-DC converters. The SI7454DDP-T1-GE3 also has a fast switching speed, which allows for higher frequency operation, contributing to compact design in circuit applications. It is characterized by a gate threshold voltage (V_GS(th)) typically between 1V and 2.5V, facilitating easy drive requirements.
Overall, the SI7454DDP-T1-GE3 is a versatile and efficient MOSFET choice for engineers looking to optimize power solutions in modern electronic designs.

Features

The SI7454DDP-T1-GE3 is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for efficient power management applications. Key features include:
1. Voltage Rating: Max drain-source voltage (VDS) of 30V.
2. Current Rating: Continuous drain current (ID) up to 60A.
3. RDS(on): Low on-resistance, typically around 4.5 mΩ, which enhances efficiency and reduces heat generation.
4. Gate Threshold Voltage: Low gate threshold voltage (VGS(th)) typically between 1V to 2.5V, enabling easy drive from low-voltage logic levels.
5. Package: Offered in a DPAK (TO-252) package for efficient thermal dissipation and compact design.
6. Applications: Suitable for various applications such as power management, DC-DC converters, and motor drivers.
7. Thermal Performance: Features improved thermal performance, making it robust for high-current applications.
These characteristics make the SI7454DDP-T1-GE3 a versatile choice for modern electronic designs requiring efficient switching and control.

Package

The SI7454DDP-T1-GE3 is packaged in a DPAK (Surface Mount) form factor. This package type is designed for efficient heat dissipation and is suitable for applications requiring high power handling in a compact space.

Pinout

The SI7454DDP-T1-GE3 is a N-channel MOSFET produced by Vishay. It features a total of 5 pins. The pin functions are as follows:
1. Gate (G) - The control terminal used to turn the MOSFET on or off.
2. Drain (D) - The terminal through which the current exits the device when it is on.
3. Source (S) - The terminal through which the current enters the device.
The other two pins are typically used for mounting and thermal management, helping to dissipate heat generated during operation. The device is designed for high-speed switching applications and has low on-resistance, making it suitable for power management in various electronic circuits.

Manufacturer

The SI7454DDP-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. The company specializes in producing a wide range of products, including MOSFETs, resistors, capacitors, and inductors, serving various industries such as automotive, industrial, telecommunications, consumer electronics, and aerospace. Founded in 1962, Vishay has established itself as a key player in the electronics market, providing high-quality components and solutions to meet the demands of modern technology. The SI7454DDP-T1-GE3 is a specific N-channel MOSFET known for its efficiency and reliability in power management applications.

Application

The SI7454DDP-T1-GE3 is a N-channel MOSFET used in various applications, including power management, DC-DC converters, motor control, and load switching in consumer electronics. Its low on-resistance and fast switching capabilities make it suitable for high-efficiency designs in automotive, industrial, and telecommunications sectors.

Equivalent

The SI7454DDP-T1-GE3 is a N-channel MOSFET. Equivalent products include:
1. IRF3205 - N-channel MOSFET with similar voltage and current ratings.
2. AO3400 - Another N-channel MOSFET with comparable specifications.
3. BSS138 - Suitable for low-power applications.
Always check datasheets for specific parameters like V_DS, I_D, and R_DS(on) to ensure compatibility.

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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