SI7415DN-T1-E3

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SI7415DN-T1-E3

MOSFET P-CH 60V 3.6A PPAK1212-8

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 3.6A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 65mOhm @ 5.7A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 25 nC @ 10 V
Vgs(Max) ±20V
PowerDissipation(Max) 1.5W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® 1212-8

Vue d'ensemble

Description

The SI7415DN-T1-E3 is a high-performance N-channel MOSFET designed for various power management applications. It features a low on-resistance (R_DS(on)) which enhances efficiency, making it suitable for power supplies, DC-DC converters, and motor control. With a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of up to 15A, it is capable of handling significant power loads. The device has a fast switching speed, which minimizes power loss during operation.
Encapsulated in a compact SO-8 package, the SI7415DN-T1-E3 is ideal for space-constrained applications. It also has built-in thermal protection features, ensuring reliability in demanding environments. The MOSFET is widely used in consumer electronics, automotive, and industrial applications, providing robust performance and efficiency. Overall, the SI7415DN-T1-E3 is a versatile component for modern electronic designs requiring efficient power management solutions.

Features

The SI7415DN-T1-E3 is a N-channel MOSFET designed for efficient power management in various applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 15A, enabling it to manage substantial power loads.
3. R_DS(on): The on-resistance is low, typically around 10 mΩ at V_GS = 10V, which enhances efficiency and reduces heat generation during operation.
4. Fast Switching: It offers fast turn-on and turn-off capabilities, ideal for high-frequency applications.
5. Package: Available in a compact SO-8 package, which aids in space-constrained designs.
6. Thermal Performance: Features good thermal performance with a maximum junction temperature of 150°C.
These characteristics make the SI7415DN-T1-E3 suitable for applications in power supplies, motor drives, and other circuitry requiring efficient switching.

Package

The SI7415DN-T1-E3 is packaged in a SO-8 (Small Outline) surface-mount package.

Pinout

The SI7415DN-T1-E3 is a N-channel MOSFET from Vishay, featuring a total of 8 pins. It is designed for various applications including power management and switching.
Here are the pin functions:
1. Gate (G) - Controls the MOSFET's switching action.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - The terminal that connects to ground or the negative side of the power supply.
This device is characterized by its low on-resistance and high-speed performance, making it suitable for high-efficiency applications in power supplies, motor control, and other power management tasks.
For specific pin configurations, it's essential to refer to the manufacturer's datasheet for precise information on pin layout and electrical characteristics.

Manufacturer

The SI7415DN-T1-E3 is manufactured by Vishay Intertechnology, Inc. Vishay is a leading global manufacturer of discrete semiconductors and passive electronic components. The company specializes in a wide range of products, including diodes, resistors, capacitors, and MOSFETs, catering to various sectors such as automotive, industrial, telecommunications, and consumer electronics. Founded in 1962, Vishay has a strong focus on innovation and quality, providing solutions that support advanced technology applications worldwide.

Application

The SI7415DN-T1-E3 is a N-channel MOSFET used in various applications, including power management, DC-DC converters, motor control, and load switching. Its low on-resistance and high-speed switching capabilities make it suitable for battery-powered devices, consumer electronics, and industrial automation. Additionally, it's utilized in automotive applications for efficient power handling.

Equivalent

The SI7415DN-T1-E3 is a power MOSFET. Equivalent products include the NXP BSS138, Fairchild FDS6910, and Infineon BSC030N10NS3. Always verify specifications such as voltage, current ratings, and R_DS(on) before substitution.

Expédition

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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