SI7336ADP-T1-E3

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SI7336ADP-T1-E3

MOSFET N-CH 30V 30A PPAK SO-8

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 30A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 3mOhm @ 25A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 50 nC @ 4.5 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 5600 pF @ 15 V
PowerDissipation(Max) 5.4W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® SO-8

Vue d'ensemble

Description

The SI7336ADP-T1-E3 is a high-performance, low-voltage MOSFET from Silicon Labs, designed for efficient power management applications. It features a low on-resistance (R_DS(on)) of just 10 mΩ, allowing for reduced power loss and improved thermal performance. The device operates within a voltage range of 4.5V to 10V, making it suitable for various applications, including DC-DC converters, battery management systems, and power distribution circuits.
This MOSFET is housed in a compact SOIC-8 package, facilitating easy integration into space-constrained designs. Its fast switching speeds contribute to efficient operation in high-frequency applications. The SI7336ADP-T1-E3 is also characterized by its excellent thermal stability, ensuring reliable performance under varying temperature conditions.
Overall, this component is ideal for designers looking to enhance energy efficiency and performance in their electronic systems.

Features

The SI7336ADP-T1-E3 is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: 30V maximum drain-to-source voltage (Vds).
2. Current Rating: Capable of handling continuous drain current (Id) up to 62A.
3. Low Rds(on): Features a low on-resistance of 6.2 mΩ at Vgs of 10V, enhancing efficiency and reducing power losses.
4. Fast Switching: Optimized for fast switching speeds, making it suitable for various power management applications.
5. Thermal Performance: Integrated thermal characteristics with a low thermal resistance, allowing for better heat dissipation.
6. Package Type: Offered in a compact SO-8 package, facilitating space-saving designs.
7. Gate Threshold Voltage (Vgs(th)): Appropriately low threshold voltage, enabling efficient operation with low gate voltages.
8. Applications: Ideal for use in DC-DC converters, power management, and motor control applications.
Overall, the SI7336ADP-T1-E3 is engineered for efficiency and reliability in modern electronic circuits.

Package

The SI7336ADP-T1-E3 is packaged in a surface mount SOIC-8 format. This package type is designed for compact integration in electronic circuits, allowing for efficient space utilization on PCBs.

Pinout

The SI7336ADP-T1-E3 is a MOSFET transistor with the following pin configuration:
1. Gate (G): This pin controls the MOSFET's switching. A voltage applied here determines whether the device is on or off.
2. Drain (D): This pin is the output where the current flows out when the MOSFET is in the 'on' state.
3. Source (S): This pin is the input where current enters the MOSFET when it is conducting.
The device is a N-channel MOSFET, specifically designed for high-efficiency switching applications. It features low on-resistance and fast switching speeds, making it suitable for power management in various electronic circuits. The pin count for this device is three, corresponding to the Gate, Drain, and Source.

Manufacturer

The SI7336ADP-T1-E3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. Founded in 1962, the company specializes in a wide range of products, including diodes, transistors, capacitors, resistors, and inductors. Vishay serves various industries, including automotive, industrial, telecommunications, and consumer electronics, making it a key player in the electronics supply chain. The SI7336ADP-T1-E3 is specifically a MOSFET (metal-oxide-semiconductor field-effect transistor) used in power management applications, showcasing Vishay's expertise in semiconductor technology.

Application

The SI7336ADP-T1-E3 is a N-channel MOSFET primarily used in applications such as DC-DC converters, power management systems, and load switching. Its low on-resistance and fast switching capabilities make it suitable for high-efficiency power supplies, motor drivers, and battery management systems. Additionally, it finds use in telecommunications, industrial automation, and consumer electronics for reliable power handling and control.

Equivalent

Equivalent products to the SI7336ADP-T1-E3 chip include the ON Semiconductor NTP60N06, Infineon BSC090N06LS, and Texas Instruments CSD19536KCS. Always verify specifications such as voltage, current ratings, and package type for compatibility.

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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