SI7164DP-T1-GE3

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SI7164DP-T1-GE3

MOSFET N-CH 60V 60A PPAK SO-8

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Spécifications

Series TrenchFET®
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 6.25mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 75 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2830 pF @ 30 V
Power Dissipation (Max) 6.25W (Ta), 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SI7164

Vue d'ensemble

Description

The SI7164DP-T1-GE3 is a part of the Si7164 series of power MOSFETs manufactured by Vishay Siliconix. This component features a N-channel configuration, designed for use in high-efficiency power management applications. With a low on-resistance (R_DS(on)) and high-speed switching capabilities, the SI7164DP is suitable for applications such as synchronous rectification, DC-DC converters, and power supply circuits.
It typically comes in a compact package, which aids in space-constrained designs, and offers enhanced thermal performance. The device operates within a wide range of voltages and currents, making it versatile for various electronic designs. Its integration aids in improving overall efficiency and reducing heat generation in circuits.
The SI7164DP-T1-GE3 is also RoHS-compliant, indicating it adheres to environmental standards. For specific performance characteristics, such as maximum voltage, current ratings, and thermal resistance, consulting the datasheet is recommended.

Features

The SI7164DP-T1-GE3 is a high-performance N-channel MOSFET designed for a variety of applications, including power management and switching. Key features include:
1. Voltage Rating: It typically has a maximum drain-source voltage (VDS) of 40V.
2. Current Rating: The device supports a continuous drain current (ID) of up to 60A, making it suitable for high-current applications.
3. RDS(on): It boasts a low on-resistance (RDS(on)) value, typically around 8.0 mΩ at VGS = 10V, enhancing efficiency and reducing heat generation.
4. Fast Switching: The MOSFET is designed for fast switching speeds, which improves the performance in high-frequency applications.
5. Thermal Resistance: It features a low thermal resistance, allowing for better heat dissipation.
6. Package: The device is housed in a TO-220 package, facilitating easy heat sinking and mounting.
This combination of features makes the SI7164DP-T1-GE3 suitable for applications in power supplies, motor control, and automotive electronics.

Package

The SI7164DP-T1-GE3 is packaged in a SOIC-8 (Small Outline Integrated Circuit) package type. This package features eight pins and is designed for surface mounting, making it suitable for compact applications in electronic circuits.

Pinout

The SI7164DP-T1-GE3 is a high-speed MOSFET driver IC with a pin count of 8. Its main functions include driving high and low side MOSFETs in half-bridge configurations, making it suitable for applications like motor control, power management, and DC-DC converters.
The pin configuration includes:
1. VIN: Driver input voltage.
2. GND: Ground.
3. IN: Input signal for the driver.
4. HO: High-side output to the gate of the high-side MOSFET.
5. VS: Source of the high-side MOSFET, connected to the load.
6. LO: Low-side output to the gate of the low-side MOSFET.
7. BOOT: Bootstrap capacitor connection for driving the high-side MOSFET.
8. NC: No connection (not used).
This compact design allows for efficient gate driving with fast switching times and reduced power loss.

Manufacturer

The SI7164DP-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global company that specializes in manufacturing discrete components and semiconductor devices. Founded in 1962, it is known for its wide range of products, including resistors, capacitors, inductors, diodes, and MOSFETs, which are used in various applications across industries such as automotive, telecommunications, industrial, and consumer electronics. Vishay is recognized for its innovation and quality in electronic components, serving customers worldwide to enable advanced technologies and improve electronic designs.

Application

The SI7164DP-T1-GE3 is a high-speed, low-on-resistance MOSFET designed for applications in power management, including DC-DC converters, load switching, and power routing. It is suitable for use in consumer electronics, automotive systems, industrial automation, and renewable energy systems, where efficient power control and switching performance are critical.

Equivalent

The SI7164DP-T1-GE3 is a MOSFET driver. Equivalent products include:
1. MIC4427 - High-speed MOSFET driver.
2. TC4420 - Dual high-speed MOSFET driver.
3. IRF740 - N-channel MOSFET with similar voltage and current ratings.
4. BSS138 - For lower power applications.
Always check the datasheet specifications to ensure compatibility with your application.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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