SI7145DP-T1-GE3

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SI7145DP-T1-GE3

MOSFET P-CH 30V 60A PPAK SO-8

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 60A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 2.6mOhm @ 25A, 10V
Vgs(th)(Max)@Id 2.3V @ 250µA
GateCharge(Qg)(Max)@Vgs 413 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 15660 pF @ 15 V
PowerDissipation(Max) 6.25W (Ta), 104W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® SO-8

Vue d'ensemble

Description

The SI7145DP-T1-GE3 is a high-performance, N-channel MOSFET designed for power management applications. It features low on-resistance and fast switching capabilities, making it suitable for use in DC-DC converters, power amplifiers, and motor control circuits. The device supports a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of up to 45A, enabling efficient operation in various electronic systems.
The Si7145DP-T1-GE3 is housed in a compact SOIC-8 package, facilitating easy integration into space-constrained designs. Its advanced thermal characteristics allow for effective heat dissipation, enhancing reliability and longevity in operation. This MOSFET is also RoHS compliant, adhering to environmental regulations.
Overall, the SI7145DP-T1-GE3 is ideal for applications requiring high efficiency and performance, making it a popular choice among engineers and designers in the electronics industry.

Features

The SI7145DP-T1-GE3 is a high-performance, dual N-channel MOSFET designed for efficient power management applications. Key features include:
1. Low On-Resistance (RDS(on)): Provides efficient conduction with minimal power loss.
2. High Voltage Rating: Supports applications up to 30V, making it suitable for various power supply designs.
3. Fast Switching Speed: Enables high-frequency operation, beneficial for switching power supplies and DC-DC converters.
4. Compact Package: Available in a small, thermally efficient SO-8 package, allowing for space-saving designs.
5. Improved Thermal Performance: Designed for better heat dissipation, enhancing reliability in high-load applications.
6. Gate Threshold Voltage: Features a low gate threshold voltage, allowing for easier drive from low-voltage microcontrollers and FET drivers.
Overall, the SI7145DP-T1-GE3 is ideal for applications such as power management, motor control, and LED driving, where efficient switching and thermal performance are critical.

Package

The SI7145DP-T1-GE3 is packaged in a 5-pin TSOT-23 (Thin Small Outline Transistor) format. This compact package type is designed for efficient thermal and electrical performance in various applications.

Pinout

The SI7145DP-T1-GE3 is a dual N-channel MOSFET designed for power management applications. It features a total of 8 pins.
### Pin Functions:
1. DRAIN (D) - The pin where the load connects; it’s the output of the MOSFET.
2. SOURCE (S) - The pin connected to ground or the lower potential side of the circuit.
3. GATE (G) - The control pin that turns the MOSFET on or off by applying a voltage.
4. DRAIN (D) - Another DRAIN pin for the second N-channel MOSFET in the package.
5. SOURCE (S) - Corresponding SOURCE pin for the second N-channel MOSFET.
6. GATE (G) - The control pin for the second N-channel MOSFET.
These pins allow for efficient switching in a compact package, making it suitable for applications like power management, DC-DC converters, and motor control.

Manufacturer

The SI7145DP-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Founded in 1962 and headquartered in Malvern, Pennsylvania, Vishay serves a wide range of industries, including automotive, industrial, computing, consumer, and telecommunications. The company is known for its innovation in technology and offers a diverse product portfolio, including MOSFETs, diodes, capacitors, resistors, and inductors. Vishay's extensive experience and expertise in electronic components make it a key player in the electronics industry.

Application

The SI7145DP-T1-GE3 is a high-speed, low On-Resistance MOSFET used in various applications, including power management, load switching, DC-DC converters, battery management systems, and general switching applications in consumer electronics, telecommunications, and industrial equipment. Its compact size and efficiency make it suitable for space-constrained designs.

Equivalent

The SI7145DP-T1-GE3 is a N-channel MOSFET. Equivalent products include the NXP BSS138, Vishay Si8233, and Fairchild FDS6680. For direct replacements, consider the ON Semiconductor MMBF170 or similar N-channel MOSFETs with comparable voltage and current ratings. Always check the datasheets to ensure compatibility with your specific application.

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UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

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