SI7139DP-T1-GE3

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SI7139DP-T1-GE3

MOSFET P-CH 30V 40A PPAK SO-8

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Spécifications

Supplier Vishay Siliconix
Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 40A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 5.5mOhm @ 15A, 10V
Vgs(th)(Max)@Id 2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 146 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 4230 pF @ 15 V
PowerDissipation(Max) 5W (Ta), 48W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® SO-8

Vue d'ensemble

Description

The SI7139DP-T1-GE3 is a high-performance power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient switching applications. Manufactured by Vishay, it features a low on-resistance (R_DS(on)) and high-speed switching capabilities, making it suitable for various applications such as DC-DC converters, power management systems, and motor control.
This MOSFET operates with a maximum drain-source voltage (V_DS) of 30V and can handle continuous drain currents (I_D) up to 100A. It is packaged in a TO-220 form factor, which facilitates effective heat dissipation. The SI7139DP-T1-GE3 is also RoHS-compliant, ensuring it meets environmental regulations.
Key attributes include its low gate charge (Q_g), which contributes to reduced switching losses and enhanced efficiency in power systems. Overall, the SI7139DP-T1-GE3 is ideal for designers seeking reliable, high-efficiency power solutions in compact electronic designs.

Features

The SI7139DP-T1-GE3 is a high-performance N-channel MOSFET designed for various applications, including power management and switching circuits. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: Capable of handling a continuous drain current (I_D) up to 30A.
3. Low R_DS(on): Offers low on-resistance, typically around 9.5 mΩ at V_GS of 10V, enhancing efficiency and thermal performance.
4. Fast Switching: Designed for quick switching capabilities, making it suitable for high-frequency applications.
5. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage ranges from 2V to 4V, allowing for effective drive with lower gate voltages.
6. Thermal Resistance: Features low thermal resistance, promoting better heat dissipation.
7. Package Type: Available in a DPAK (TO-252) package for easy integration into PCB designs.
These attributes make the SI7139DP-T1-GE3 suitable for automotive, industrial, and consumer electronics applications.

Package

The SI7139DP-T1-GE3 is packaged in a SOIC-8 (Small Outline Integrated Circuit) package. This surface-mount package typically features 8 pins and is designed for efficient thermal performance and space-saving in electronic applications.

Manufacturer

The SI7139DP-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. The company specializes in products such as resistors, capacitors, inductors, diodes, and MOSFETs, among others. Founded in 1962, Vishay serves a wide range of industries, including automotive, industrial, computing, and telecommunications. Their innovations in semiconductor technology and component design help drive advancements in electronic systems and devices across various applications.

Application

The SI7139DP-T1-GE3 is a N-channel MOSFET widely used in applications such as power management, switching power supplies, motor control, and DC-DC converters. It is suitable for load switching and signal routing in consumer electronics, automotive systems, and industrial automation due to its low on-resistance and fast switching capabilities.

Equivalent

The SI7139DP-T1-GE3 is a high-performance MOSFET driver. Equivalent products include the MIC4426, TC4420, and IRF610. For specific applications, consider looking into devices from similar families by manufacturers like Texas Instruments, ON Semiconductor, and Fairchild. Always verify specifications such as voltage, current rating, and switching speed to ensure compatibility.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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