SI7121DN-T1-GE3

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SI7121DN-T1-GE3

MOSFET P-CH 30V 16A PPAK1212-8

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Spécifications

Supplier Vishay Siliconix
Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 16A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 18mOhm @ 10A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 65 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 1960 pF @ 15 V
PowerDissipation(Max) 3.7W (Ta), 52W (Tc)
OperatingTemperature -50°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® 1212-8

Vue d'ensemble

Description

The SI7121DN-T1-GE3 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient switching applications. It features a low on-resistance and fast switching speeds, making it suitable for power management and conversion applications in consumer electronics, automotive, and industrial systems.
With a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) rating of 30A, it can handle substantial power loads while maintaining thermal efficiency. The device is housed in a compact SO-8 package, facilitating easy integration into circuit designs. Additionally, it is optimized for low gate charge, which minimizes the power loss during operation.
The SI7121DN-T1-GE3 is often used in applications such as DC-DC converters, motor drivers, and battery management systems, where reliability and efficiency are crucial. It also comes with RoHS compliance, ensuring that it meets environmental standards for hazardous substances.

Features

The SI7121DN-T1-GE3 is a N-channel MOSFET designed for efficient power management applications. Key features include:
1. Voltage Rating: It typically supports a drain-source voltage (V_DS) of 30V.
2. Current Rating: Capable of handling continuous drain current (I_D) up to 40A.
3. R_DS(on): Low on-resistance, which significantly reduces conduction losses, typically around 8 mΩ.
4. Gate Threshold Voltage: It has a low gate threshold voltage (V_GS(th)) that ensures efficient switching.
5. Fast Switching: Optimized for high-speed applications, it provides quick switching capabilities.
6. Package Type: Offered in a compact SO-8 package, allowing for space-efficient designs.
7. Thermal Performance: Excellent thermal resistance characteristics to handle heat dissipation effectively.
8. Applications: Suitable for various applications, including DC-DC converters, power management, and motor control.
These features make the SI7121DN-T1-GE3 a reliable choice for modern electronic designs requiring efficient power handling.

Package

The SI7121DN-T1-GE3 is packaged in a DPAK (TO-252) surface-mount package. This package type is designed for efficient heat dissipation and is commonly used in power management applications.

Pinout

The SI7121DN-T1-GE3 is a high-speed, low-on-resistance N-channel MOSFET from Vishay. It comes in a 6-pin, TSOP-6 package. The pin count is six, and the functions of the pins are as follows:
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - The terminal through which current leaves the MOSFET.
3. Source (S) - The terminal through which current enters the MOSFET.
4. Source (S) - An additional source pin for lower resistance paths in certain configurations.
5. Drain (D) - An additional drain pin to facilitate parallel connections or improve thermal performance.
6. Tab / Exposed pad - Provides thermal dissipation and is typically connected to the source.
This device is optimized for high-performance applications in power management and switching.

Manufacturer

The SI7121DN-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global leader in the electronics industry, specializing in discrete semiconductors and passive electronic components. The company designs and produces a wide range of products, including diodes, transistors, capacitors, and resistors, which are used in various applications such as automotive, industrial, computing, and consumer electronics. Vishay is known for its commitment to quality and innovation in the development of advanced electronic components.

Application

The SI7121DN-T1-GE3 is a N-channel MOSFET designed for applications such as power management, load switching, and battery management. It's suitable for use in DC-DC converters, motor control, and general-purpose switching applications due to its low on-resistance and high efficiency. Additionally, it can be used in portable electronics and automotive systems where compact size and reliability are essential.

Equivalent

The SI7121DN-T1-GE3 is a high-speed MOSFET driver and can be replaced by similar devices such as the MIC4427, TC4420, or the NAND gate-based drivers like the 74HC14 in specific applications. Ensure to check specifications such as voltage, current ratings, and switching speed for compatibility.

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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