SI7115DN-T1-GE3

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SI7115DN-T1-GE3

MOSFET P-CH 150V 8.9A PPAK1212-8

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 150 V
Current-ContinuousDrain(Id)@25°C 8.9A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 6V, 10V
RdsOn(Max)@IdVgs 295mOhm @ 4A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 42 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1190 pF @ 50 V
PowerDissipation(Max) 3.7W (Ta), 52W (Tc)
OperatingTemperature -50°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® 1212-8

Vue d'ensemble

Description

The SI7115DN-T1-GE3 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in various power management and switching applications. It features a low on-resistance (R_DS(on)) value, which enhances efficiency by minimizing power losses during operation. This MOSFET can handle a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of up to 30A, making it suitable for applications such as DC-DC converters, power supplies, and motor drivers.
The device is packaged in a compact SO-8 form factor, facilitating easy integration into circuit boards while maintaining thermal performance. Additionally, it has fast switching capabilities, which contribute to its effectiveness in high-frequency applications. Overall, the SI7115DN-T1-GE3 is a reliable choice for engineers seeking efficient power solutions in consumer electronics, automotive, and industrial applications.

Features

The SI7115DN-T1-GE3 is a N-channel MOSFET designed for efficient power management applications. Key features include:
1. Low On-Resistance: It has a low R_DS(on) value, which minimizes conduction losses, enhancing efficiency.
2. High Voltage Rating: The device can handle drain-source voltages up to 30V, making it suitable for various applications.
3. High Current Capability: It supports continuous drain currents up to 15A, allowing it to manage substantial load requirements.
4. Fast Switching Speed: The MOSFET enables quick switching, which is critical for applications in power supplies and switching regulators.
5. Thermal Performance: It has a well-designed package that facilitates effective heat dissipation, ensuring reliability under high-temperature conditions.
6. Package Type: Available in a compact SO-8 package, it is space-efficient for PCB designs.
These features make the SI7115DN-T1-GE3 ideal for applications in DC-DC converters, motor drivers, and power management systems.

Package

The SI7115DN-T1-GE3 is packaged in a SOIC-8 (Small Outline Integrated Circuit) package. This type of package is designed for surface-mount applications and features eight pins.

Pinout

The SI7115DN-T1-GE3 is a N-channel MOSFET with a total of 8 pins. Its primary functions include:
1. Gate (G): Controls the MOSFET's switching operation.
2. Drain (D): The output connection where the load is connected.
3. Source (S): The input connection where the current enters the MOSFET.
The pin configuration is as follows:
1. Pin 1: Gate
2. Pin 2: Source
3. Pin 3: Drain
4. Pin 4-8: Additional pins for thermal and electrical connection, including the body diode connections.
This device is often used in applications requiring efficient switching, such as in power management and DC-DC converters, due to its low on-resistance and fast switching capabilities.

Manufacturer

The SI7115DN-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive components, serving a wide range of markets including automotive, industrial, consumer electronics, and telecommunications. The company is known for its innovation in technologies such as MOSFETs, diodes, and capacitors, among others. Vishay is recognized for its commitment to quality and reliability in its products, making it a key player in the electronic components industry.

Application

The SI7115DN-T1-GE3 is a N-channel MOSFET used in various applications, including power management, DC-DC converters, load switching, and motor control. Its low on-resistance and fast switching capabilities make it suitable for battery-powered devices, automotive applications, and high-efficiency power supplies. It is also employed in consumer electronics, industrial automation, and renewable energy systems.

Equivalent

Equivalent products to the SI7115DN-T1-GE3 chip include the BSS123, IRF3708, and FDS6910. These alternatives typically feature similar specifications for voltage, current, and package type. Always verify the specific electrical characteristics and thermal performance to ensure compatibility in your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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