SI4948BEY-T1-E3

Les images sont à titre de référence seulement

SI4948BEY-T1-E3

MOSFET 2P-CH 60V 2.4A 8-SOIC

100% original & Nouveau

24 heures prêtes à expédier

Garantie 365 jours

RFQ et Obtenez plus de rabais

Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType 2 P-Channel (Dual)
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 60V
Current-ContinuousDrain(Id)@25°C 2.4A
RdsOn(Max)@IdVgs 120mOhm @ 3.1A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 22nC @ 10V
Power-Max 1.4W
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
Package/Case 8-SOIC (0.154, 3.90mm Width)

Vue d'ensemble

Description

The SI4948BEY-T1-E3 is a high-performance MOSFET designed for a variety of power management applications. It features low on-resistance, high-speed switching, and is optimized for efficiency in both low- and high-voltage environments. This N-channel MOSFET is particularly suitable for applications like DC-DC converters, load switching, and power management systems in consumer electronics, automotive, and industrial sectors.
Key specifications include a maximum drain-source voltage (V_DS) of 30V, a continuous drain current (I_D) of up to 62A, and a low R_DS(on) value, ensuring minimal power loss. The device is housed in a compact SOIC-8 package, which aids in space-constrained designs. Its robust thermal performance and reliability make it a preferred choice among engineers for enhancing system efficiency and overall performance in electronic designs.
Overall, the SI4948BEY-T1-E3 is an effective solution for modern power management needs, combining versatility and reliability in one package.

Features

The SI4948BEY-T1-E3 is an N-channel MOSFET designed for a variety of power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. On-Resistance (R_DS(on)): The device offers low on-resistance, typically around 8.5 mΩ at V_GS = 10V, which enhances efficiency by reducing power loss during operation.
3. Continuous Drain Current: It can handle a continuous drain current (I_D) of up to 50A, allowing it to drive high loads.
4. Fast Switching: The MOSFET is designed for fast switching capabilities, making it ideal for applications such as synchronous rectification and DC-DC converters.
5. Package: Available in a compact SO-8 package, enabling efficient space utilization on PCBs.
6. Thermal Performance: It features good thermal characteristics, supporting effective heat dissipation.
These features make the SI4948BEY-T1-E3 suitable for automotive, industrial, and consumer electronics applications.

Package

The SI4948BEY-T1-E3 is packaged in a SOIC-8 (Small Outline Integrated Circuit) format.

Pinout

The SI4948BEY-T1-E3 is a N-channel MOSFET with a pin count of 8. Its primary functions include acting as a power switch for various applications, such as motor control, power management, and DC-DC converters. The device is designed for high efficiency and low on-resistance, making it suitable for low-voltage power applications.
The pin configuration is as follows:
1. Gate (G): Controls the MOSFET switching.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The terminal connected to ground or the negative side of the power supply.
4. Body Diode: Internal diode for inductive loads.
The SI4948BEY-T1-E3 features a maximum continuous drain current of 48A and low R_DS(on) for improved thermal performance. It is housed in a compact surface-mount package, making it suitable for space-constrained designs.

Manufacturer

The SI4948BEY-T1-E3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global company that specializes in the production of discrete semiconductors and passive electronic components. Founded in 1962, Vishay is known for its wide range of products, including diodes, transistors, capacitors, resistors, and inductors, serving various industries such as automotive, industrial, telecommunications, consumer electronics, and military. The company focuses on innovation and quality, providing reliable components for diverse applications in electronics.

Application

The SI4948BEY-T1-E3 is a N-channel MOSFET used in various applications, including power management, DC-DC converters, motor drivers, and load switching. Its features make it suitable for high-efficiency designs in consumer electronics, automotive systems, and industrial equipment, particularly where low on-resistance and fast switching are critical for performance.

Equivalent

Equivalent products for the SI4948BEY-T1-E3 chip include the NCP81074, MIC4424, and FAN3100. When looking for alternatives, consider parameters like voltage rating, rise/fall times, and package type to ensure compatibility. Always verify specifications in the datasheet to confirm suitability for your application.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

Similaire