SI4925DDY-T1-GE3

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SI4925DDY-T1-GE3

MOSFET 2P-CH 30V 8A 8-SOIC

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType 2 P-Channel (Dual)
FETFeature Standard
DraintoSourceVoltage(Vdss) 30V
Current-ContinuousDrain(Id)@25°C 8A
RdsOn(Max)@IdVgs 29mOhm @ 7.3A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 50nC @ 10V
InputCapacitance(Ciss)(Max)@Vds 1350pF @ 15V
Power-Max 5W
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 8-SOIC (0.154, 3.90mm Width)

Vue d'ensemble

Description

The SI4925DDY-T1-GE3 is a N-channel MOSFET designed for high-performance switching applications. It features a maximum drain-source voltage (Vds) of 25V and a continuous drain current (Id) rating of 30A, allowing it to handle significant power loads. The MOSFET is characterized by low on-resistance (Rds(on)), which minimizes conduction losses and enhances efficiency in power circuits.
This device is packaged in a SO-8 surface-mount format, making it suitable for compact electronic designs. With a fast switching speed, it is ideal for applications such as DC-DC converters, motor drivers, and power management systems.
The SI4925DDY-T1-GE3 also includes features like a low threshold voltage, which allows for efficient operation at lower gate voltages, making it compatible with various control signals. Its reliability and thermal performance make it a popular choice in both consumer electronics and industrial applications.

Features

The SI4925DDY-T1-GE3 is an N-channel MOSFET designed for various power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 25V, suitable for low-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 25A, making it effective for high-power tasks.
3. Low R_DS(on): It offers a low on-resistance (R_DS(on)) of approximately 8.0 mΩ at a gate-source voltage (V_GS) of 10V, ensuring efficient performance and reduced power loss.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1V to 2.5V, allowing for easy drive with low-voltage logic levels.
5. Package Type: It is housed in a DPAK package, providing robust thermal performance and ease of mounting.
6. Applications: Commonly used in DC-DC converters, motor drivers, and other power switching applications.
Overall, the SI4925DDY-T1-GE3 is designed for efficiency and reliability in demanding environments.

Package

The SI4925DDY-T1-GE3 is packaged in a SOIC-8 (Small Outline Integrated Circuit) format. This surface mount package is designed for easy integration into electronic circuits, offering a compact design suitable for various applications.

Pinout

The SI4925DDY-T1-GE3 is a N-channel MOSFET with a pin count of 8. The primary functions of its pins are as follows:
1. Gate (G) - Controls the MOSFET operation.
2. Drain (D) - The output terminal where current flows out of the device.
3. Source (S) - The input terminal where current enters the device.
4. Body Diode - Internal parasitic diode that allows current to flow from drain to source when the MOSFET is off.
The package type is SO-8, which is commonly used for surface-mounted applications. This MOSFET is designed for efficient switching and can handle a maximum continuous drain current of around 25 A with a low on-resistance, making it suitable for various power management applications.

Manufacturer

The manufacturer of the SI4925DDY-T1-GE3 is Vishay Intertechnology, Inc. Vishay is a multinational company that specializes in the manufacturing of semiconductors and passive electronic components. Founded in 1962, it is known for its broad range of products, including resistors, capacitors, inductors, diodes, and transistors, which are used in various applications across multiple industries such as automotive, consumer electronics, telecommunications, and industrial systems. Vishay is recognized for its commitment to innovation, quality, and reliability in electronic components, making it a significant player in the global electronics market.

Application

The SI4925DDY-T1-GE3 is a N-channel MOSFET used in various applications including power management, DC-DC converters, motor control, and low-side switching. Its low on-resistance and fast switching capabilities make it suitable for energy-efficient designs in consumer electronics, automotive systems, and industrial automation.

Equivalent

The SI4925DDY-T1-GE3 is an N-channel MOSFET with a low on-resistance and fast switching capabilities. Equivalent products include the IRLZ44N, STP16NF06, and FQP30N06L. Always verify specific parameters like voltage, current, and package type to ensure compatibility with your application.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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