SI4447ADY-T1-GE3

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SI4447ADY-T1-GE3

MOSFET P-CH 40V 7.2A 8SO

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 40 V
Current-ContinuousDrain(Id)@25°C 7.2A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 45mOhm @ 5A, 10V
Vgs(th)(Max)@Id 2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 38 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 970 pF @ 20 V
PowerDissipation(Max) 4.2W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-SOIC

Vue d'ensemble

Description

The SI4447ADY-T1-GE3 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in various power management applications. It features a low on-resistance, enabling efficient power distribution and reducing energy loss. This device typically has a maximum drain-source voltage (V_DS) rating of 30V and can handle continuous drain currents of up to 40A, making it suitable for applications such as power supplies, DC-DC converters, and motor control.
The MOSFET is packaged in a compact SO-8 format, which aids in space-saving designs in electronic circuits. It has a low gate threshold voltage, allowing it to be easily driven by standard logic levels. Additionally, the SI4447ADY-T1-GE3 is recognized for its thermal performance, ensuring reliable operation in demanding environments.
Overall, this component is favored in both consumer electronics and industrial applications for its efficiency and robustness, contributing to improved performance in power electronic systems.

Features

The SI4447ADY-T1-GE3 is a high-performance N-channel MOSFET designed for efficient power management applications. Key features include:
1. Low On-Resistance (RDS(on)): Typically around 7.5 mΩ, ensuring minimal conduction losses.
2. High Voltage Rating: Supports drain-source voltages up to 30V, suitable for various switching applications.
3. Fast Switching Speed: Enables rapid turn-on and turn-off, enhancing efficiency in high-frequency applications.
4. Small Package Size: Available in a compact SO-8 package, ideal for space-constrained designs.
5. Low Gate Charge (Qgs): Reduces drive power requirements, improving overall system efficiency.
6. Thermal Performance: Good thermal characteristics allow for reliable operation at elevated temperatures.
7. Applications: Commonly used in power management, DC-DC converters, and motor drivers.
This MOSFET is ideal for applications requiring high efficiency and compact design.

Package

The SI4447ADY-T1-GE3 is packaged in a SOIC-8 (Small Outline Integrated Circuit) package type. This surface-mount package features eight pins and is commonly used for compact design applications in electronics.

Pinout

The SI4447ADY-T1-GE3 is a N-channel MOSFET with a pin count of 8. It is primarily used in power management applications due to its low on-resistance and high efficiency.
The pin functionalities are as follows:
1. Gate (G): Controls the MOSFET's on/off state.
2. Drain (D): Connects to the load; current flows out from here when the device is on.
3. Source (S): Common reference point for the circuit; current flows into here when the device is on.
4. Body Diode: Internal to the MOSFET; allows current to flow from the source to the drain when the device is off.
The other pins may be for heat sinking or substrate connection, ensuring reliable operation in various applications. Always refer to the specific datasheet for detailed information and application guidelines.

Manufacturer

The SI4447ADY-T1-GE3 is manufactured by Silicon Labs, Inc. Silicon Labs is a semiconductor company that specializes in microcontrollers, sensors, and wireless communication technologies. Founded in 1996 and headquartered in Austin, Texas, Silicon Labs focuses on innovative solutions for the Internet of Things (IoT), automotive applications, and industrial automation. They are known for their low-power, highly integrated products that enable connectivity and efficiency in electronic designs.

Application

The SI4447ADY-T1-GE3 is a N-channel MOSFET designed for applications in power management, including load switching, DC-DC converters, and motor control. Its low on-resistance and fast switching capabilities make it suitable for use in battery-powered devices, consumer electronics, and automotive applications. Additionally, it can be used in LED drivers and power supply circuits, enhancing efficiency and thermal performance.

Equivalent

The SI4447ADY-T1-GE3 is a low-power, high-performance RF transceiver. Equivalent products include the SI4463, SI4460, and other similar low-power RF transceivers from Silicon Labs or competitors like the Nordic Semiconductor nRF24 series. Always check the specific datasheet for exact specifications and compatibility.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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