SI2371EDS-T1-GE3

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SI2371EDS-T1-GE3

MOSFET P-CH 30V 4.8A SOT-23

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Spécifications

Supplier Vishay Siliconix
Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 4.8A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 2.5V, 10V
RdsOn(Max)@IdVgs 45mOhm @ 3.7A, 10V
Vgs(th)(Max)@Id 1.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 35 nC @ 10 V
Vgs(Max) ±12V
PowerDissipation(Max) 1W (Ta), 1.7W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23

Vue d'ensemble

Description

The SI2371EDS-T1-GE3 is a N-channel MOSFET designed for low-voltage, high-efficiency applications. It features a low R_DS(on) rating, ensuring minimal conduction losses, which makes it suitable for power management in devices such as DC-DC converters, battery management systems, and load switch circuits. With a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of around 10A, this MOSFET can handle significant load demands. Its fast switching capabilities enable efficient operation in high-frequency applications. The device comes in a compact SO-8 package, making it suitable for space-constrained designs. Additionally, the SI2371EDS-T1-GE3 is RoHS compliant, indicating it meets environmental standards for hazardous substances. Overall, this MOSFET is an excellent choice for engineers seeking reliable performance in modern electronic circuits.

Features

The SI2371EDS-T1-GE3 is an N-channel MOSFET designed for efficient switching applications. Key features include:
1. Low R_DS(on): Ensures minimal power loss and improved thermal performance.
2. High Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 30V.
3. Current Handling: Capable of continuous drain current (I_D) up to 40A.
4. Fast Switching Speed: Optimized for high-frequency applications, contributing to efficient operation in power management systems.
5. Thermal Performance: Features a low thermal resistance, enabling effective heat dissipation.
6. Surface Mount Package: Offered in a compact SO-8 package for easy integration in PCB designs.
7. Gate Threshold Voltage: Low V_GS(th) allows for easy drive, compatible with low-voltage logic levels.
Overall, the SI2371EDS-T1-GE3 is ideal for applications in power supplies, DC-DC converters, and motor drivers, providing reliability and efficiency.

Package

The SI2371EDS-T1-GE3 is packaged in a SOT-23 (Surface Mount) format.

Pinout

The SI2371EDS-T1-GE3 is a dual N-channel MOSFET designed for power management applications. It has a total of 8 pins. The pin configuration and their functions are as follows:
1. Gate 1 (G1) - Gate of the first N-channel MOSFET.
2. Drain 1 (D1) - Drain of the first N-channel MOSFET.
3. Source 1 (S1) - Source of the first N-channel MOSFET.
4. Gate 2 (G2) - Gate of the second N-channel MOSFET.
5. Drain 2 (D2) - Drain of the second N-channel MOSFET.
6. Source 2 (S2) - Source of the second N-channel MOSFET.
7. Common Source (CS) - Common source connection for both MOSFETs.
8. N/C (No Connect) - Not connected.
The device is suitable for applications such as load switching and power management in devices requiring efficient power handling.

Manufacturer

The SI2371EDS-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. Established in 1962, the company specializes in various electronic components, including diodes, transistors, capacitors, resistors, and inductors, serving a wide range of industries such as automotive, industrial, telecommunications, and consumer electronics. Vishay is known for its commitment to technological innovation and high-quality manufacturing, with a focus on providing solutions that meet the evolving needs of the electronics market.

Application

The SI2371EDS-T1-GE3 is a N-channel MOSFET used in various applications including power management, DC-DC converters, motor drives, and load switching. Its low on-resistance and fast switching capabilities make it suitable for battery-operated devices, portable electronics, and power supply circuits in consumer electronics and automotive applications.

Equivalent

Equivalent products to the SI2371EDS-T1-GE3 include the AO3401, BSS138, and IRLML2502, which are also N-channel MOSFETs with similar voltage and current ratings. Always check the specific datasheets for exact specifications and characteristics to ensure compatibility in your application.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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