SI2347DS-T1-GE3

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SI2347DS-T1-GE3

MOSFET P-CH 30V 5A SOT23-3

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 5A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 42mOhm @ 3.8A, 10V
Vgs(th)(Max)@Id 2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 22 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 705 pF @ 15 V
PowerDissipation(Max) 1.7W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3 (TO-236)

Vue d'ensemble

Description

The SI2347DS-T1-GE3 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. It features a low on-resistance (R_DS(on)), which minimizes conduction losses and enhances power efficiency in various circuits. This MOSFET is commonly used in power management, motor control, and DC-DC converters due to its fast switching capabilities and thermal performance.
Key specifications include a maximum drain-source voltage (V_DS) of 30V, continuous drain current (I_D) of up to 50A, and a gate threshold voltage (V_GS(th)) typically between 1-3V. The device is packaged in a compact SO-8 format, making it suitable for space-constrained applications.
The SI2347DS-T1-GE3 is favored in consumer electronics, automotive, and industrial applications for its reliability and efficiency. It is also RoHS-compliant, ensuring it meets environmental standards. For detailed electrical characteristics, users should refer to the manufacturer's datasheet.

Features

The SI2347DS-T1-GE3 is an N-channel MOSFET designed for efficient switching applications. Key features include:
1. Voltage Rating: It has a drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of up to 40A, which allows for robust performance in various circuits.
3. R_DS(on): The on-resistance is low, typically around 10 mΩ at V_GS = 10V, ensuring minimal power loss during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 1 to 3V, enabling efficient operation with low gate drive requirements.
5. Package Type: It comes in a compact SO-8 package, facilitating space-saving designs in PCBs.
6. Fast Switching: The MOSFET supports high-speed switching, ideal for applications like power management and converters.
These features make the SI2347DS-T1-GE3 suitable for various applications, including power supplies, DC-DC converters, and motor control systems.

Package

The SI2347DS-T1-GE3 is packaged in a SOT-23 surface-mount package. This compact package type is commonly used for MOSFETs, providing efficient thermal performance and ease of integration into various electronic circuits.

Pinout

The SI2347DS-T1-GE3 is a dual N-channel MOSFET with a total of 8 pins. Its pin functions are as follows:
1. Gate (G1) - Controls the first N-channel MOSFET.
2. Drain (D1) - The drain terminal for the first N-channel MOSFET.
3. Source (S1) - The source terminal for the first N-channel MOSFET.
4. Gate (G2) - Controls the second N-channel MOSFET.
5. Drain (D2) - The drain terminal for the second N-channel MOSFET.
6. Source (S2) - The source terminal for the second N-channel MOSFET.
7. Drain (D1) - Common drain for the first N-channel.
8. Source (S2) - Common source for the second N-channel.
The device is designed for low-voltage and high-speed applications, commonly used in power management and switching applications.

Manufacturer

The manufacturer of the SI2347DS-T1-GE3 is Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. Founded in 1962, the company specializes in a wide range of products, including diodes, transistors, resistors, capacitors, and inductors. Vishay serves various industries, such as automotive, industrial, consumer electronics, telecommunications, and military, providing essential components for electronic circuits. The SI2347DS-T1-GE3 is a dual N-channel MOSFET, commonly used in applications requiring efficient power switching and management. Vishay is recognized for its commitment to quality and innovation in the electronics sector.

Application

The SI2347DS-T1-GE3 is primarily used in applications such as DC-DC converters, power management systems, and load switches. Its low RDS(on) and high efficiency make it suitable for battery-powered devices, consumer electronics, and automotive applications, where efficient power delivery and thermal performance are critical.

Equivalent

The SI2347DS-T1-GE3 is an N-channel MOSFET. Equivalent products include the IRLZ44N, BSS138, and FDS6910. Check specifications like V_DS, I_D, and R_DS(on) to ensure compatibility for your specific application.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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