SI2343CDS-T1-GE3

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SI2343CDS-T1-GE3

MOSFET P-CH 30V 5.9A SOT23-3

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 5.9A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 45mOhm @ 4.2A, 10V
Vgs(th)(Max)@Id 2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 21 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 590 pF @ 15 V
PowerDissipation(Max) 1.25W (Ta), 2.5W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3 (TO-236)

Vue d'ensemble

Description

The SI2343CDS-T1-GE3 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient switching applications. It features a low on-resistance (R_DS(on)), which enables lower power losses and improved thermal performance in various electronic circuits. With a maximum drain-source voltage of 30V and a continuous drain current rating of 12A, it is suitable for applications such as power management, motor control, and DC-DC converters.
This MOSFET is housed in a compact Surface Mount Device (SMD) package, making it ideal for space-constrained designs. Its fast switching speed allows for greater efficiency in high-frequency applications. Additionally, the SI2343CDS-T1-GE3 is RoHS compliant, ensuring it meets environmental standards.
Engineers often select this device for its reliability, performance characteristics, and versatility in consumer electronics, automotive, and industrial applications. For detailed specifications, refer to the manufacturer's datasheet.

Features

The SI2343CDS-T1-GE3 is a dual N-channel MOSFET designed for efficient switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V.
2. Current Handling: The device can handle a continuous drain current (I_D) of up to 18A, making it suitable for high-power applications.
3. Low R_DS(on): Offers a low on-resistance (R_DS(on)) of approximately 10 mΩ, ensuring minimal power loss during operation.
4. Package Type: Available in a compact SOIC-8 package, facilitating space-saving designs on PCBs.
5. Fast Switching Speeds: Designed for fast switching, which is advantageous for applications such as DC-DC converters and motor drivers.
6. Thermal Resistance: Features a low thermal resistance, enhancing thermal performance and reliability.
7. RoHS Compliant: Environmentally friendly design, compliant with RoHS regulations.
These attributes make the SI2343CDS-T1-GE3 ideal for applications in power management and automotive systems.

Package

The SI2343CDS-T1-GE3 is packaged in a SOIC-8 (Small Outline Integrated Circuit) format. This package type features a small footprint suitable for surface-mount technology, allowing for efficient space utilization on printed circuit boards.

Pinout

The SI2343CDS-T1-GE3 is a N-channel MOSFET with a total of 8 pins. Its primary functions include switching and amplification in electronic circuits. The pin configuration is as follows:
1. Gate (G) - Controls the switching action.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - The input terminal from which current flows into the MOSFET.
The specific configuration is standard for MOSFETs, allowing for efficient control of electronic signals. This device is often used in applications such as power management, load switching, and signal amplification. It features low on-resistance and fast switching times, making it suitable for various electronic systems.

Manufacturer

The SI2343CDS-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global leader in discrete semiconductors and passive components. The company specializes in the production of a wide range of electronic components, including MOSFETs, diodes, capacitors, resistors, and inductors, catering to various industries such as automotive, consumer electronics, industrial, and telecommunications. Vishay is known for its commitment to innovation and quality, providing solutions that enhance the performance and efficiency of electronic systems.

Application

The SI2343CDS-T1-GE3 is a dual N-channel MOSFET used in various applications, including power management, load switching, DC-DC converters, and battery management systems. Its low on-resistance and fast switching capabilities make it suitable for high-efficiency power supplies, motor control, and portable electronic devices. It is also utilized in consumer electronics and automotive applications for efficient power handling.

Equivalent

The SI2343CDS-T1-GE3 is a dual N-channel MOSFET. Equivalent products include the BSS138, IRLZ44N, and AO3400. Always verify specifications such as voltage, current ratings, and packaging before substitution to ensure compatibility with your application.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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