SI2337DS-T1-GE3

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SI2337DS-T1-GE3

MOSFET P-CH 80V 2.2A SOT23-3

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 80 V
Current-ContinuousDrain(Id)@25°C 2.2A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 6V, 10V
RdsOn(Max)@IdVgs 270mOhm @ 1.2A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 17 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 500 pF @ 40 V
PowerDissipation(Max) 760mW (Ta), 2.5W (Tc)
OperatingTemperature -50°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3 (TO-236)

Vue d'ensemble

Description

The SI2337DS-T1-GE3 is a P-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for various electronic applications, particularly in power management and switching. It features a low threshold voltage, enabling it to turn on with lower gate drive voltages, which is beneficial for battery-operated devices.
Key specifications include a maximum drain-source voltage (V_DS) of -30V, a continuous drain current (I_D) of -6.5A, and a low on-resistance (R_DS(on)) that reduces power loss during operation. Its compact SOT-23 package makes it suitable for space-constrained designs.
The device is commonly used in load switching, power management circuits, and as a high-side switch in DC-DC converters. Its fast switching capabilities and thermal efficiency make it ideal for applications needing reliable and efficient performance. The SI2337DS-T1-GE3 is also RoHS compliant, ensuring it meets environmental regulations.

Features

The SI2337DS-T1-GE3 is an N-channel MOSFET designed for use in various applications, including power management and switching. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: The device can handle continuous drain current (I_D) up to 5.8A.
3. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is between 1V to 2.5V, making it suitable for low-voltage operation.
4. On-Resistance: It boasts a low on-resistance (R_DS(on)) of around 0.045 ohms at V_GS = 10V, which enhances efficiency.
5. Package Type: Housed in a SOT-23 package, it offers compact dimensions ideal for space-constrained applications.
6. Fast Switching Speed: The device supports fast switching, making it suitable for high-frequency applications.
7. Thermal Characteristics: It has good thermal stability, ensuring reliable operation at elevated temperatures.
These features make the SI2337DS-T1-GE3 suitable for use in power supplies, DC-DC converters, and motor control applications.

Package

The SI2337DS-T1-GE3 is packaged in a SOT-23-3 type package. This surface-mount device is designed for ease of integration in various electronic applications.

Pinout

The SI2337DS-T1-GE3 is a N-channel MOSFET packaged in a SO-8 (8-pin) configuration. It has a total of 8 pins. The primary functions of the pins are as follows:
1. Gate (G): Controls the MOSFET; a voltage applied here turns the device on/off.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The terminal through which current enters the MOSFET; typically connected to ground in low-side switching.
The pin configuration in the SO-8 package is generally as follows:
1. Pin 1: Gate
2. Pin 2: Drain
3. Pin 3: Source
4. Pin 4: Source
5. Pin 5: Drain
6. Pin 6: Drain
7. Pin 7: Gate
8. Pin 8: Source
This device is used for various applications requiring efficient power switching, such as in power management and motor control circuits.

Manufacturer

The SI2337DS-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a multinational company that specializes in the manufacturing of discrete semiconductors and passive electronic components. Founded in 1962, it is known for providing a wide range of products including resistors, capacitors, inductors, and integrated circuits. Vishay serves various industries such as automotive, industrial, consumer electronics, and telecommunications. The company emphasizes innovation and quality in its product offerings, catering to the growing demands of electronic applications worldwide.

Application

The SI2337DS-T1-GE3 is an N-channel MOSFET primarily used in low-voltage applications for power management, including DC-DC converters, load switching, and battery management systems. Its characteristics make it suitable for consumer electronics, automotive systems, and portable devices. Additionally, it can be utilized in motor control and power distribution applications due to its efficient switching performance.

Equivalent

The SI2337DS-T1-GE3 is a dual N-channel MOSFET. Equivalent products include the BSS138, 2N7000, and SSM3K20FS. Ensure to compare specifications such as threshold voltage, current rating, and package type to confirm compatibility in your application.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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