SI2325DS-T1-GE3

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SI2325DS-T1-GE3

MOSFET P-CH 150V 530MA SOT23-3

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Spécifications

Series TrenchFET®
Part Status Active
Base Product Number SI2325
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 530mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 510 pF @ 25 V
Power Dissipation (Max) 750mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package TO-236-3, SC-59, SOT-23-3
Packaging Cut Tape (CT), Tape & Reel (TR)

Vue d'ensemble

Description

The SI2325DS-T1-GE3 is a dual N-channel MOSFET designed for efficient switching applications. It features a compact surface-mount package that is ideal for space-constrained designs. The device is characterized by low on-resistance (RDS(on)), which minimizes conduction losses and enhances thermal performance, making it suitable for power management in various electronic circuits.
With a maximum drain-source voltage rating of 25V and a continuous drain current capability of 6.5A, it can handle moderate power levels effectively. Its fast switching speed allows for improved efficiency in applications like DC-DC converters, motor drivers, and load switches.
The SI2325DS-T1-GE3 is manufactured using advanced technology, ensuring reliability and consistency in performance. It is often used in consumer electronics, telecommunications, and automotive systems. Overall, this MOSFET is an excellent choice for designers looking to optimize power efficiency and thermal management in compact electronic designs.

Features

The SI2325DS-T1-GE3 is a N-channel MOSFET designed for various power management applications. Key features include:
- Voltage Rating: Rated for a maximum drain-source voltage (V_DS) of 25V.
- Current Handling: Can handle continuous drain current (I_D) of up to 30A, making it suitable for high-current applications.
- R_DS(on): Low on-resistance (typically around 10 mΩ), which reduces power losses during operation.
- Gate Threshold Voltage: Gate-source threshold voltage (V_GS(th)) typically ranges from 1V to 2.5V, allowing for easy drive with low-voltage logic levels.
- Package: Available in a compact SO-8 package, which aids in thermal performance and space-saving designs.
- Applications: Ideal for use in power management, DC-DC converters, motor drivers, and general-purpose switching applications.
- Thermal Characteristics: Enhanced thermal performance with a high maximum junction temperature.
These features make the SI2325DS-T1-GE3 a versatile choice for designers looking for efficient and reliable switching solutions.

Package

The SI2325DS-T1-GE3 is packaged in a 5-lead SC-70 (SOT-23) package type. This compact surface-mount package is designed for efficient space-saving in electronic applications.

Pinout

The SI2325DS-T1-GE3 is a dual N-channel MOSFET with a total of 8 pins. It features the following functions:
1. Gate (G) - Controls the MOSFET operation; there are two gates, one for each N-channel transistor.
2. Drain (D) - The output terminal where the current flows out; there are two drain pins, one for each MOSFET.
3. Source (S) - The input terminal where current flows in; there are two source pins, one for each MOSFET.
The specific pinout is as follows:
- Pins 1 and 2: Gate of the first N-channel MOSFET
- Pins 3 and 4: Drain of the first N-channel MOSFET
- Pins 5 and 6: Source of the first N-channel MOSFET
- Pins 7 and 8: Gate, Drain, and Source of the second N-channel MOSFET
This configuration allows for efficient switching and control in various electronic applications.

Manufacturer

The SI2325DS-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. Founded in 1962, the company is known for its extensive product portfolio, which includes a wide range of components such as resistors, capacitors, inductors, diodes, and transistors. Vishay serves various industries, including automotive, industrial, telecommunications, and consumer electronics. The SI2325DS-T1-GE3 is a N-channel MOSFET known for its low on-resistance and high-speed switching capabilities, making it suitable for various power management applications. Vishay is headquartered in Malvern, Pennsylvania, and operates multiple manufacturing facilities worldwide.

Application

The SI2325DS-T1-GE3 is a N-channel MOSFET widely used in applications such as power management, load switching, and battery management systems. Its low on-resistance and fast switching capabilities make it suitable for DC-DC converters, motor drivers, and automotive applications. It is also employed in consumer electronics for efficient power control and in renewable energy systems for optimal energy harvesting.

Equivalent

The SI2325DS-T1-GE3 is a dual N-channel MOSFET. Equivalent products include the BSS138, IRF3708, and AO3400. Always verify specifications like voltage, current ratings, and R_DS(on) for compatibility in your application.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

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