SI2319CDS-T1-GE3

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SI2319CDS-T1-GE3

MOSFET P-CH 40V 4.4A SOT23-3

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 40 V
Current-ContinuousDrain(Id)@25°C 4.4A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 77mOhm @ 3.1A, 10V
Vgs(th)(Max)@Id 2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 21 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 595 pF @ 20 V
PowerDissipation(Max) 1.25W (Ta), 2.5W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3 (TO-236)

Vue d'ensemble

Description

The SI2319CDS-T1-GE3 is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for various electronic applications. It features a low on-resistance (R_DS(on)), making it suitable for power management, switching applications, and low-voltage operations. With a maximum drain-source voltage (V_DS) of 30V, it can handle considerable current levels while maintaining efficiency.
This MOSFET is often utilized in circuits where fast switching and high efficiency are critical, such as in power supplies, motor drivers, and DC-DC converters. Additionally, the SI2319CDS-T1-GE3 is housed in a compact SOT-23 package, facilitating easy integration into PCB designs. It is also RoHS compliant, ensuring it meets environmental regulations regarding hazardous materials. With its combination of performance, reliability, and compact size, the SI2319CDS-T1-GE3 is a popular choice for engineers in designing modern electronic systems.

Features

The SI2319CDS-T1-GE3 is an N-channel MOSFET designed for efficient power management in various applications. Key features include:
1. Low RDS(on): Offers low on-resistance (RDS(on)) for improved efficiency and reduced power loss during operation.
2. High Voltage Rating: Typically rated for a maximum drain-source voltage (VDS) of 30V, making it suitable for various low voltage applications.
3. Compact Package: Available in a compact SO-8 package, facilitating space-saving designs in printed circuit boards (PCBs).
4. Fast Switching Speed: Suitable for high-frequency applications due to its fast turn-on and turn-off characteristics.
5. Thermal Management: Designed to handle high currents while maintaining thermal efficiency.
6. Applications: Ideal for DC-DC converters, load switching, power management in portable devices, and high-efficiency motor drives.
Overall, the SI2319CDS-T1-GE3 is an efficient and versatile option for power applications requiring reliable switching performance.

Package

The SI2319CDS-T1-GE3 is packaged in a SOT-23 (Surface Mount) package type.

Pinout

The SI2319CDS-T1-GE3 is a N-channel MOSFET with a total of 8 pins. The pin configuration and their functions are as follows:
1. Pin 1 (Gate): Controls the MOSFET's conductive state; a voltage applied here allows current to flow from drain to source.
2. Pin 2 (Source): The terminal through which the current enters the MOSFET.
3. Pin 3 (Drain): The terminal through which current exits the MOSFET.
4. Pin 4 (Source): Generally connected to the source terminal for better thermal performance (sometimes used as a second source pin).
5. Pin 5 (Gate): A second gate for redundancy, allowing for different control schemes or configurations.
6. Pin 6 (Drain): A second drain for parallel operation or improved current handling.
7. Pin 7 (N/C): Not connected; can be left floating.
8. Pin 8 (N/C): Not connected; can also be left floating.
The device is often used in power management applications due to its low on-resistance and high efficiency.

Manufacturer

The SI2319CDS-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a prominent global manufacturer of electronic components, specializing in semiconductors and passive components such as resistors, capacitors, and inductors. Founded in 1962, the company serves a wide range of industries, including automotive, telecommunications, consumer electronics, and industrial applications. Vishay is known for its innovation in technology and has a strong presence in the electronics marketplace, providing solutions that enhance performance and reliability in various electronic systems.

Application

The SI2319CDS-T1-GE3 is an N-channel MOSFET used in various applications, including power management in DC-DC converters, load switches, battery management systems, and high-speed switching applications. It is suitable for portable devices, consumer electronics, and automotive systems due to its low R_DS(on) and efficient thermal performance.

Equivalent

Equivalent products to the SI2319CDS-T1-GE3 MOSFET include the BSS138, 2N7000, and BS170. These alternatives may vary in specifications such as voltage rating, current handling, and package type, so it's essential to verify compatibility with your application requirements. Always consult the datasheets for precise comparisons.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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