SI2307BDS-T1-E3

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SI2307BDS-T1-E3

MOSFET P-CH 30V 2.5A SOT23-3

  • Fabricant
  • Mfr. Partie #SI2307BDS-T1-E3
  • Paquet SOT23-3
  • Fiche de données
  • En stock4558

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 2.5A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 78mOhm @ 3.2A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 15 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 380 pF @ 15 V
PowerDissipation(Max) 750mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3 (TO-236)

Vue d'ensemble

Description

The SI2307BDS-T1-E3 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications. It features low on-resistance (RDS(on)), which enhances efficiency in power management systems, making it suitable for use in DC-DC converters, load switches, and motor drivers.
Key specifications include a maximum drain-source voltage (VDS) of 30V and a continuous drain current (ID) of 10A. The package type is typically a small surface-mount SOIC-8, facilitating compact PCB designs and improving thermal performance.
The SI2307BDS-T1-E3 offers fast switching speeds and low gate charge, which helps minimize power losses during operation. It is commonly used in consumer electronics, automotive applications, and other electronic devices that require efficient power management.
Overall, this MOSFET is a reliable choice for engineers looking to optimize performance and energy efficiency in various electronic applications.

Features

The SI2307BDS-T1-E3 is an N-channel MOSFET designed for low-voltage applications. Key features include:
1. Voltage Rating: Supports a drain-source voltage (V_DS) up to 30V.
2. Current Rating: Can handle a continuous drain current (I_D) of up to 9.2A.
3. R_DS(on): Low on-resistance (R_DS(on)) of approximately 0.045Ω at V_GS of 10V, minimizing power loss and heating during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 1V to 2.5V, allowing for efficient switching in low-voltage applications.
5. Package: Available in a compact SOT-23 package, facilitating space-efficient designs.
6. Temperature Range: Operates effectively over a wide temperature range, enhancing reliability in diverse conditions.
7. Fast Switching Speed: Suitable for high-speed switching applications, improving overall efficiency.
This MOSFET is ideal for DC-DC converters, power management circuits, and other switching applications in consumer electronics and automotive systems.

Package

The SI2307BDS-T1-E3 is packaged in a SOT-23-3 (Small Outline Transistor) format. This surface-mount package is commonly used for low-power applications and provides a compact design for efficient space utilization on printed circuit boards.

Pinout

The SI2307BDS-T1-E3 is a N-channel MOSFET housed in a TSOP-6 package. It has a total of 6 pins. The pin configuration and functions are as follows:
1. Gate (G): Controls the MOSFET, allowing it to turn on or off based on the voltage applied.
2. Drain (D): The output terminal where the current flows out of the MOSFET when it is on.
3. Source (S): The terminal through which current enters the MOSFET.
In the TSOP-6 package, typically two pins are connected to the Gate, Drain, and Source, respectively. The SI2307BDS-T1-E3 is designed for low-voltage applications, offering high-speed switching and low on-resistance, making it suitable for power management and other electronic applications.

Manufacturer

The SI2307BDS-T1-E3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. The company specializes in a wide range of products, including diodes, transistors, capacitors, resistors, and inductors, serving various industries such as automotive, industrial, consumer electronics, and telecommunications. Founded in 1962, Vishay has established itself as a key player in the electronic components market, known for its high-quality products and innovative technologies. The SI2307BDS-T1-E3 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) primarily used in power management applications.

Application

The SI2307BDS-T1-E3 is a N-channel MOSFET commonly used in various applications including power management, DC-DC converters, load switches, and battery protection circuits. Its low on-resistance and fast switching capabilities make it suitable for consumer electronics, automotive systems, and industrial control applications, where efficient power handling and thermal performance are essential.

Equivalent

The SI2307BDS-T1-E3 is a MOSFET typically used for low-side switching applications. Equivalent products include the BSS138, SI2308, and IRLZ44N. Always verify specifications such as voltage, current ratings, and package type to ensure compatibility for your specific application.

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