SI2304BDS-T1-E3

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SI2304BDS-T1-E3

MOSFET N-CH 30V 2.6A SOT23-3

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 2.6A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 70mOhm @ 2.5A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 4 nC @ 5 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 225 pF @ 15 V
PowerDissipation(Max) 750mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3 (TO-236)

Vue d'ensemble

Description

The SI2304BDS-T1-E3 is a N-channel MOSFET designed for low-voltage and high-speed switching applications. It features a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) rating of up to 8A, making it suitable for a variety of power management tasks. The device is housed in a compact surface-mount package, which helps reduce the overall footprint in electronic designs.
Key specifications include a low on-resistance (R_DS(on)), which enhances efficiency by minimizing power loss during operation. Its fast switching capabilities make it ideal for applications such as DC-DC converters, power supplies, and motor drivers. The SI2304BDS-T1-E3 is optimized for use in consumer electronics, automotive, and industrial applications.
Overall, this MOSFET combines excellent performance characteristics with reliability, making it a versatile component for engineers designing modern electronic systems.

Features

The SI2304BDS-T1-E3 is a N-channel MOSFET designed for efficient power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 20V, making it suitable for low-voltage applications.
2. On-Resistance (RDS(on)): With a low on-resistance of 0.045 ohms (max) at a gate voltage (VGS) of 10V, it ensures minimal power loss during operation.
3. Current Handling: Capable of handling continuous drain currents up to 4.1A, it supports various load demands.
4. Gate Threshold Voltage: The gate threshold voltage (VGS(th)) ranges from 1V to 2.5V, allowing for efficient switching at lower voltages.
5. Fast Switching Speed: Its design allows for quick turn-on and turn-off times, enhancing performance in high-frequency applications.
6. Package: It comes in a compact SOT-23 package, contributing to space-saving designs in PCB layouts.
These features make the SI2304BDS-T1-E3 ideal for applications in power management, battery-powered devices, and DC-DC converters.

Package

The SI2304BDS-T1-E3 is packaged in a SOT-23 form factor, a compact surface-mount package commonly used for low-power applications.

Pinout

The SI2304BDS-T1-E3 is a N-channel MOSFET designed for various switching applications. It features a total of 8 pins. The pin configuration is as follows:
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - The input terminal through which the current enters the MOSFET.
Typically, the pinout includes:
- Pin 1 (G) - Gate
- Pin 2 (D) - Drain
- Pin 3 (S) - Source
- Pin 4 (D) - Drain (optional for thermally improved designs)
- Pin 5 (D) - Drain (optional for thermally improved designs)
- Pin 6 (S) - Source (optional for thermally improved designs)
- Pin 7 (S) - Source (optional for thermally improved designs)
- Pin 8 (D) - Drain (optional for thermally improved designs)
The device is commonly used in low-voltage applications due to its low on-resistance and fast switching capabilities. For detailed specifications, refer to the manufacturer's datasheet.

Manufacturer

The SI2304BDS-T1-E3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global leader in discrete semiconductors and passive components. Founded in 1962, the company specializes in the design and production of a wide range of electronic components, including diodes, transistors, capacitors, and resistors, serving various industries such as automotive, industrial, consumer electronics, and telecommunications. Vishay is known for its innovation and quality in the electronics sector, providing products that enhance performance and energy efficiency in electronic devices.

Application

The SI2304BDS-T1-E3 is an N-channel MOSFET used primarily in low-voltage applications such as power management, battery management systems, DC-DC converters, and load switching. It is suitable for portable devices, consumer electronics, and various power supply applications due to its efficiency and compact size.

Equivalent

The SI2304BDS-T1-E3 is a N-channel MOSFET. Equivalent products include:
1. BSS138
2. 2N7000
3. IRLML2502
4. SI2305
Always verify specifications such as voltage, current ratings, and package type to ensure compatibility.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

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