SI2302DDS-T1-GE3

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SI2302DDS-T1-GE3

MOSFET N-CH 20V 2.9A SOT23-3

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 20 V
Current-ContinuousDrain(Id)@25°C 2.9A (Tj)
DriveVoltage(MaxRdsOnMinRdsOn) 2.5V, 4.5V
RdsOn(Max)@IdVgs 57mOhm @ 3.6A, 4.5V
Vgs(th)(Max)@Id 850mV @ 250µA
GateCharge(Qg)(Max)@Vgs 5.5 nC @ 4.5 V
Vgs(Max) ±8V
PowerDissipation(Max) 710mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3 (TO-236)

Vue d'ensemble

Description

SI2302DDS-T1-GE3 is likely a designation for a specific course or module, possibly within an academic or training program. The "SI" could stand for a subject area like Systems Integration or a similar field, while "2302" typically denotes the course level or number, suggesting it’s an intermediate course. "DDS" may refer to a focus on Digital Data Systems or Design and Development Strategies, and "T1" could indicate the course type or semester (e.g., Term 1). "GE3" might signify that this course fulfills a General Education requirement or is part of a broader program.
For detailed information, including course objectives, syllabus, and prerequisites, it’s best to consult the educational institution’s course catalog or website.

Features

The SI2302DDS-T1-GE3 is a N-channel MOSFET designed for efficient switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 20V, making it suitable for low-voltage applications.

2. Current Rating: With a continuous drain current (I_D) of up to 3.3A, it supports moderate power requirements.
3. Low R_DS(on): It offers a low on-resistance (R_DS(on)) of approximately 0.025Ω at V_GS = 10V, ensuring minimal power loss during operation.
4. Fast Switching Speed: Designed for high-speed switching, it is ideal for applications such as DC-DC converters, power management, and motor control.
5. Package: The MOSFET comes in a compact SOT-23 package, which aids in space-saving designs and thermal management.
6. Thermal Resistance: It has a low thermal resistance, improving heat dissipation capabilities.
Overall, the SI2302DDS-T1-GE3 is a reliable choice for various electronic circuits requiring efficient power switching.

Package

The SI2302DDS-T1-GE3 is packaged in a SOT-23-3, which is a compact surface-mount package that typically contains three leads. This package type is commonly used for small-signal MOSFETs and similar components, allowing for efficient use in compact electronic designs.

Pinout

The SI2302DDS-T1-GE3 is a dual N-channel MOSFET housed in a 6-pin SOT-23 package. It is designed for various applications, including load switching and power management.
Pin Count: 6
Pin Functions:
1. Gate 1 (G1) - Controls the operation of the first N-channel MOSFET.
2. Source 1 (S1) - Source terminal for the first MOSFET; typically connected to ground in common applications.
3. Drain 1 (D1) - Drain terminal for the first MOSFET; connects to the load.
4. Gate 2 (G2) - Controls the operation of the second N-channel MOSFET.
5. Source 2 (S2) - Source terminal for the second MOSFET; typically connected to ground.
6. Drain 2 (D2) - Drain terminal for the second MOSFET; connects to the load.
These MOSFETs are used for efficient switching in electronic circuits, providing low on-resistance and fast switching capabilities.

Manufacturer

The SI2302DDS-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. The company specializes in a wide range of products, including diodes, MOSFETs, resistors, capacitors, and inductors. It serves various industries, such as automotive, telecommunications, consumer electronics, industrial, and military applications. Vishay is known for its innovation and commitment to quality, providing solutions that enhance the performance and efficiency of electronic devices.

Application

The SI2302DDS-T1-GE3 is a dual N-channel MOSFET widely used in various applications, including power management, load switching, and DC-DC converters. It is suitable for low-voltage and high-efficiency designs in consumer electronics, battery-powered devices, and motor control systems. Its compact package and low on-resistance enhance performance in space-constrained applications.

Equivalent

The SI2302DDS-T1-GE3 is a N-channel MOSFET. Equivalent products include the BSS138, SI2301, and BSP139. When selecting alternatives, ensure similar ratings for voltage, current, R_DS(on), and package type. Always consult datasheets for specific applications to ensure compatibility.

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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