SI2302CDS-T1-GE3

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SI2302CDS-T1-GE3

MOSFET N-CH 20V 2.6A SOT23-3

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 20 V
Current-ContinuousDrain(Id)@25°C 2.6A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 2.5V, 4.5V
RdsOn(Max)@IdVgs 57mOhm @ 3.6A, 4.5V
Vgs(th)(Max)@Id 850mV @ 250µA
GateCharge(Qg)(Max)@Vgs 5.5 nC @ 4.5 V
Vgs(Max) ±8V
PowerDissipation(Max) 710mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3 (TO-236)

Vue d'ensemble

Description

The SI2302CDS-T1-GE3 is a dual N-channel MOSFET designed for low-voltage applications, commonly used in power management and load switching. It features a compact surface-mount package (SOT-23) that facilitates easy integration into various electronic circuits. With a maximum drain-source voltage of 20V and a continuous drain current rating of up to 3.9A, it is suitable for driving small motors, LEDs, and in power supply circuits.
Key specifications include low on-resistance (R_DS(on)), which enhances efficiency by reducing power loss during operation. Additionally, the device has a fast switching speed, making it ideal for applications requiring rapid turn-on and turn-off capabilities. The SI2302CDS-T1-GE3 is often employed in consumer electronics, automotive applications, and industrial controls due to its reliable performance in a variety of environments. Its RoHS-compliant construction ensures that it meets environmental standards for hazardous materials.

Features

The SI2302CDS-T1-GE3 is a N-channel MOSFET designed for power management applications. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 20V, making it suitable for low-voltage applications.
2. Current Handling: Capable of handling a continuous drain current (I_D) of up to 4.2A, which allows it to manage significant power loads efficiently.
3. R_DS(on): Exhibits a low on-resistance (R_DS(on)) of approximately 0.2 ohms at a gate-source voltage (V_GS) of 10V, which minimizes power loss and heat generation during operation.
4. Gate Threshold Voltage: Features a low gate threshold voltage (V_GS(th)) of 1-2.5V, enabling easy drive from low-voltage logic levels.
5. Package: Available in a compact SO-8 package, enhancing thermal performance and PCB space efficiency.
6. Applications: Ideal for use in DC-DC converters, load switching, and motor control applications.
Overall, the SI2302CDS-T1-GE3 is a versatile and efficient component suitable for various electronic designs.

Package

The SI2302CDS-T1-GE3 is packaged in a small SOT-23 (3-lead) surface-mount package. This compact form factor is ideal for space-constrained applications in electronics.

Pinout

The SI2302CDS-T1-GE3 is a dual N-channel MOSFET with a pin count of 8. It features the following pin configuration:
1. Gate 1 (G1): Controls the first N-channel MOSFET.
2. Drain 1 (D1): Drain terminal for the first MOSFET.
3. Source 1 (S1): Source terminal for the first MOSFET.
4. Source 2 (S2): Source terminal for the second MOSFET.
5. Drain 2 (D2): Drain terminal for the second MOSFET.
6. Gate 2 (G2): Controls the second N-channel MOSFET.
7. Gate 3 (G3): Unused or not connected (depends on specific application).
8. N/C: No connection.
This component is typically used in power management applications, including load switching and DC-DC converters, due to its low on-resistance and high-speed switching capabilities.

Manufacturer

The SI2302CDS-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. The company specializes in producing a wide range of products, including diodes, transistors, capacitors, resistors, and optoelectronics. Founded in 1962, Vishay serves various industries such as automotive, industrial, telecommunications, computing, and consumer electronics. The SI2302CDS-T1-GE3 is a N-channel MOSFET, commonly used in power management and signal switching applications. Vishay is recognized for its innovation and quality in the electronic components market.

Application

The SI2302CDS-T1-GE3 is a N-channel MOSFET primarily used in power management applications. Its application areas include switch-mode power supplies, DC-DC converters, load switching, and motor control. It is suitable for low-voltage and low to medium power applications due to its low on-resistance and fast switching capabilities. Additionally, it can be used in portable devices and battery management systems.

Equivalent

The SI2302CDS-T1-GE3 is an N-channel MOSFET. Equivalent products include the BSS138, 2N7000, and BS170. Other alternatives may involve similar specifications such as voltage, current ratings, and package type. Always check datasheets for voltage (VDS), current (ID), threshold voltage (VGS(th)), and RDS(on) to ensure compatibility for your specific application.

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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