SI2301CDS-T1-GE3

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SI2301CDS-T1-GE3

MOSFET P-CH 20V 3.1A SOT23-3

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 20 V
Current-ContinuousDrain(Id)@25°C 3.1A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 2.5V, 4.5V
RdsOn(Max)@IdVgs 112mOhm @ 2.8A, 4.5V
Vgs(th)(Max)@Id 1V @ 250µA
GateCharge(Qg)(Max)@Vgs 10 nC @ 4.5 V
Vgs(Max) ±8V
InputCapacitance(Ciss)(Max)@Vds 405 pF @ 10 V
PowerDissipation(Max) 860mW (Ta), 1.6W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3 (TO-236)

Vue d'ensemble

Description

The SI2301CDS-T1-GE3 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for low-voltage and high-efficiency applications. It features a maximum drain-source voltage (V_DS) of 30V, with a continuous drain current (I_D) of up to 3.7A. The device is known for its low on-resistance (R_DS(on)), which enhances efficiency by minimizing power losses during operation.
This MOSFET is typically utilized in applications such as power management, DC-DC converters, and load switching in consumer electronics and automotive systems. Its compact package (SOT-23) allows for space-saving designs in printed circuit boards (PCBs).
The SI2301CDS-T1-GE3 is also RoHS compliant, which makes it suitable for environmentally friendly designs. Overall, its combination of performance, efficiency, and compact size makes it a popular choice in various electronic applications.

Features

The SI2301CDS-T1-GE3 is an N-channel MOSFET designed for low-voltage applications. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (Vds) of 20V.
2. Current Rating: Has a continuous drain current (Id) of 3.9A, making it suitable for various power applications.
3. On-Resistance: Exhibits a low on-resistance (Rds(on)) of approximately 0.008 ohms at Vgs = 10V, ensuring efficient power management and reduced heat generation.
4. Gate Threshold Voltage: Features a gate threshold voltage (Vgs(th)) in the range of 1V to 3V, enabling operation with low gate drive voltage.
5. Package Type: Available in a compact SOT-23 package, facilitating space-saving designs in electronic circuits.
6. Fast Switching Speed: Suitable for high-speed switching applications, enhancing performance in power conversion circuits.
Overall, the SI2301CDS-T1-GE3 is ideal for applications in power management, motor control, and other electronic design circuits requiring efficient switching.

Package

The SI2301CDS-T1-GE3 is packaged in a SOT-23 surface mount package.

Pinout

The SI2301CDS-T1-GE3 is an N-channel MOSFET with a pin count of 6. The pin configuration and their functions are as follows:
1. Gate (G): Controls the MOSFET switching; applies voltage to turn it on or off.
2. Drain (D): The output terminal where the load is connected; current flows out of this pin when the MOSFET is on.
3. Source (S): The terminal through which current enters the MOSFET, typically connected to ground in low-side switching applications.
4. Source (S) (2nd pin): Another source pin for enhanced current handling; often used in parallel configurations.
5. Drain (D) (2nd pin): Additional pin for the drain, allowing for better thermal management and current distribution.
6. Gate (G) (2nd pin): Provides redundancy or alternative connection for the gate.
The SI2301CDS-T1-GE3 is commonly used in low voltage applications for switching and amplification.

Manufacturer

The manufacturer of the SI2301CDS-T1-GE3 is Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components, serving a wide range of industries, including automotive, industrial, computing, telecommunications, and consumer electronics. Founded in 1962, Vishay is known for its extensive product portfolio, which includes resistors, capacitors, inductors, diodes, and transistors, among other components. The company emphasizes innovation, quality, and reliability in its products, catering to both standard and custom requirements in the electronics market.

Application

The SI2301CDS-T1-GE3 is a N-channel MOSFET commonly used in various applications such as power management, battery management systems, DC-DC converters, load switches, and motor control circuits. Its low on-resistance and fast switching capabilities make it suitable for efficient power conduction in consumer electronics, automotive systems, and industrial automation.

Equivalent

The SI2301CDS-T1-GE3 is a N-channel MOSFET. Equivalent products include the BSS138, 2N7000, and IRF3708. For similar specifications, consider the AO3400, BS170, and RFP30N06LE. Always check the datasheets for exact electrical characteristics and package compatibility.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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