SGT50T65FD1PN

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SGT50T65FD1PN

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Spécifications

Manufacturer Hangzhou Silan Microelectronics
Package TO-3P-3

Vue d'ensemble

Description

The SGT50T65FD1PN is a power MOSFET designed for high-efficiency applications in power management and conversion. It features a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) rating typically around 50A, making it suitable for various industrial applications, including switch-mode power supplies (SMPS), inverter circuits, and motor drives.
Key attributes of the SGT50T65FD1PN include low on-resistance (R_DS(on)), which enhances performance by reducing conduction losses, and fast switching capabilities, allowing for efficient operation at high frequencies. Its rugged design ensures reliable performance in demanding environments.
Additionally, the device is housed in a TO-220 package, facilitating effective thermal management. This power MOSFET is ideal for designers seeking to optimize efficiency and thermal performance in their electronic systems. Overall, the SGT50T65FD1PN fits well in applications requiring high voltage and current handling while maintaining low energy losses.

Features

The SGT50T65FD1PN is a high-performance N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage of 650V, making it suitable for high-voltage applications.
2. Current Handling: Capable of handling continuous drain currents up to 50A, enabling efficient power management.
3. Low RDS(on): Offers a low on-resistance (typically around 0.065 ohms), which reduces power loss and improves thermal performance.
4. Fast Switching Speed: Designed for quick switching, enhancing efficiency in applications like converters and inverters.
5. Thermal Stability: Features a robust thermal resistance characteristic, allowing for reliable operation in demanding environments.
6. Package Type: Available in a TO-220 package, facilitating easy heat dissipation and mounting.
Overall, the SGT50T65FD1PN is suitable for applications in renewable energy systems, industrial power supplies, and motor drives due to its efficiency and reliability.

Package

The SGT50T65FD1PN is housed in a TO-247 package type. This package is designed for high-power applications, providing efficient thermal management and robust performance.

Pinout

The SGT50T65FD1PN is an N-channel MOSFET designed for high-voltage applications. It typically features a TO-220 package with a pin count of 3. The pin configuration and their functions are as follows:
1. Gate (G) - The control pin that regulates the MOSFET's operation. A voltage applied here allows current to flow from the drain to the source.
2. Drain (D) - The pin where the load is connected. Current flows from drain to source when the MOSFET is in the 'on' state.
3. Source (S) - The reference pin for the device. It connects to the ground or the negative side of the load circuit.
The SGT50T65FD1PN is utilized in applications such as power supplies, motor control, and switching circuits due to its high efficiency and fast switching capabilities.

Manufacturer

The SGT50T65FD1PN is manufactured by STMicroelectronics, a global semiconductor company headquartered in Geneva, Switzerland. STMicroelectronics specializes in designing and manufacturing a wide range of semiconductor products and solutions, including microcontrollers, sensors, power management devices, and analog ICs. The company serves various sectors, including automotive, industrial, personal electronics, and communication, positioning itself as a leader in innovation and technology in the semiconductor industry.

Application

The SGT50T65FD1PN is a high-performance power MOSFET primarily used in applications such as power supplies, motor drives, and industrial equipment. Its low on-resistance and high efficiency make it suitable for DC-DC converters, inverters, and renewable energy systems like solar inverters. Additionally, it is utilized in electric vehicles and battery management systems to enhance energy efficiency and thermal performance.

Equivalent

The SGT50T65FD1PN is an IGBT (Insulated Gate Bipolar Transistor) with similar specifications. Equivalent products include the Infineon IGBT series, such as the IGBT50T65, Fairchild FGH50T65, and the ON Semiconductor MUD50T65. Always verify specific ratings and characteristics to ensure compatibility with your application.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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