SGL160N60UFDTU

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SGL160N60UFDTU

IGBT 600V 160A 250W TO264

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Spécifications

Package Tube
ProductStatus Last Time Buy
Voltage-CollectorEmitterBreakdown(Max) 600 V
Current-Collector(Ic)(Max) 160 A
Current-CollectorPulsed(Icm) 300 A
Vce(on)(Max)@VgeIc 2.6V @ 15V, 80A
Power-Max 250 W
SwitchingEnergy 2.5mJ (on), 1.76mJ (off)
InputType Standard
GateCharge 345 nC
Td(on/off)@25°C 40ns/90ns
TestCondition 300V, 80A, 3.9Ohm, 15V
ReverseRecoveryTime(trr) 95 ns
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
Package/Case TO-264-3, TO-264AA

Vue d'ensemble

Description

The SGL160N60UFDTU is a high-performance N-channel MOSFET designed for use in high-voltage applications. It features a voltage rating of 600V and a continuous drain current of 160A, making it suitable for power conversion, motor drives, and other high-efficiency power management systems. With a low on-resistance (RDS(on)), it minimizes conduction losses, enhancing overall system efficiency. The device typically offers fast switching capabilities, which is essential for applications like switch-mode power supplies (SMPS) and renewable energy systems.
The SGL160N60UFDTU is housed in a robust TO-220 package, allowing for effective thermal management and easy mounting on heat sinks. Its gate threshold voltage is optimized for reliable operation in various conditions. Overall, this MOSFET is an excellent choice for engineers seeking reliable performance in demanding electrical environments.

Features

The SGL160N60UFDTU is a high-performance IGBT (Insulated Gate Bipolar Transistor) module designed for various applications including industrial drives, renewable energy systems, and power supplies. Key features include:
1. Voltage Rating: 600V, making it suitable for medium voltage applications.
2. Current Rating: 160A, capable of handling substantial loads.
3. Low Switching Losses: Designed for high efficiency and reduced energy losses during operation.
4. High Thermal Performance: Enhanced heat dissipation characteristics for better reliability and longevity.
5. Integrated Freewheeling Diodes: Provides fast recovery and enhanced efficiency in inverter applications.
6. Compact Design: Facilitates easy integration into power systems with limited space.
7. Robust Packaging: Ensures durability and reliability under harsh operating conditions.
These features make the SGL160N60UFDTU suitable for demanding applications requiring efficient power control and management.

Package

The SGL160N60UFDTU is packaged in a TO-247 type housing. This package is designed for high-power applications, providing efficient thermal management and ease of mounting.

Pinout

The SGL160N60UFDTU is an N-channel MOSFET designed for high-voltage applications, specifically suitable for use in power conversion systems. It typically comes in a TO-247 package, which features three pins.
### Pin Count and Functions:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to this pin allows the MOSFET to conduct current between the drain and source.
2. Drain (D): This pin is connected to the load and allows the current to flow out of the MOSFET when it is turned on.
3. Source (S): This pin is connected to ground or the negative side of the power supply, completing the circuit for current flow.
The SGL160N60UFDTU is rated for a maximum continuous drain current and a high breakdown voltage, making it suitable for various demanding applications in power electronics.

Manufacturer

The SGL160N60UFDTU is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in designing and producing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors. The company serves various industries such as automotive, industrial, and communication, focusing on energy efficiency and automotive safety technologies. Infineon is known for its innovation in semiconductor technology and plays a crucial role in the development of solutions for a more sustainable and connected world.

Application

The SGL160N60UFDTU is a high-voltage, high-current IGBT (Insulated Gate Bipolar Transistor) primarily used in applications such as motor drives, power inverters, renewable energy systems (e.g., solar, wind), industrial power supplies, and welding equipment. Its efficiency in switching and handling significant power makes it suitable for energy conversion and control in various industrial and commercial applications.

Equivalent

The SGL160N60UFDTU is an IGBT module. Equivalent products include the following:
1. FGA160N60 - Fairchild Semiconductor
2. IRG4PH50U - Infineon Technologies
3. MG400Q2YS40 - Mitsubishi Electric
4. SGL120N60UFDTU - Same series with lower current rating.
Always verify specifications for compatibility in your specific application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

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Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

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