SGL160N60UFD

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SGL160N60UFD

onsemi PTTIGBT TO264 80A 600V

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  • Mfr. Partie #SGL160N60UFD
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Spécifications

Packaging Tube
Standard Pack Qty 375

Vue d'ensemble

Description

The SGL160N60UFD is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for power applications. It features a voltage rating of 600V and a current rating of 160A, making it suitable for use in medium to high power converters, inverters, and motor drives. This device combines the advantages of both MOSFETs and bipolar transistors, offering low conduction losses and high switching speeds.
Key specifications include a low saturation voltage and improved thermal performance, which contribute to efficient energy conversion. The IGBT is typically used in applications such as renewable energy systems, industrial drives, and traction systems. Its robust design ensures reliability and durability in challenging operating environments.
The SGL160N60UFD is part of a wider family of IGBTs, offering versatility for various power electronics applications. Proper heat sinking and thermal management are crucial for optimal performance and longevity.

Features

The SGL160N60UFD is a high-performance N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: 600V, suitable for high-voltage applications.
2. Current Rating: 160A continuous drain current, providing robust performance in demanding conditions.
3. Low RDS(on): Typically around 0.16Ω, ensuring lower conduction losses.
4. Fast Switching: Optimized for high-speed switching, enhancing efficiency in applications like power supplies and motor drives.
5. Thermal Resistance: Good thermal performance with low junction-to-case thermal resistance, allowing for effective heat dissipation.
6. Package Type: Available in a TO-247 package, facilitating easy mounting and good thermal management.
7. Gate Threshold Voltage: Designed for low gate drive voltage, compatible with standard drive circuits.
These features make the SGL160N60UFD ideal for industrial, automotive, and renewable energy applications.

Package

The SGL160N60UFD is typically packaged in a TO-247 package type. This package is designed for high-power applications, offering good thermal management and electrical performance.

Pinout

The SGL160N60UFD is a power MOSFET with a pin count of 5. Its primary functions include high-speed switching and efficient power management in applications such as power supplies and motor drives. The pin configuration typically includes:
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The terminal through which the load current flows when the MOSFET is on.
3. Source (S): The terminal connected to the ground or the negative side of the circuit.
The device is designed for applications requiring high voltage (up to 600V) and high current (up to 160A), making it suitable for various industrial and automotive applications. Its low on-resistance (RDS(on)) allows for reduced power losses during operation.

Manufacturer

The SGL160N60UFD is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer. Infineon specializes in power management, automotive, industrial, and security solutions. The company is known for its innovative products that serve various sectors, including automotive electronics, renewable energy, and Internet of Things (IoT) applications. Based in Germany, Infineon operates worldwide, focusing on enhancing energy efficiency and sustainable technologies. The SGL160N60UFD is a specific type of power MOSFET, widely used in applications that require high efficiency and reliability.

Application

The SGL160N60UFD is a high-performance IGBT (Insulated Gate Bipolar Transistor) used primarily in power electronics applications. Common application areas include motor drives, renewable energy systems (like solar inverters), traction drives in electric vehicles, and industrial automation. It is also utilized in power supply circuits and switch-mode power supplies due to its efficiency in handling high voltage and current loads.

Equivalent

The SGL160N60UFD is a SiC MOSFET. Equivalent products include the Infineon IMW160R60M1, Cree/Wolfspeed C3M0065060K, and STMicroelectronics STP160N60M2. Always verify specifications such as voltage ratings, current capacity, and thermal performance when selecting equivalents.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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