SCT3060ALGC11

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SCT3060ALGC11

SICFET N-CH 650V 39A TO247N

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Spécifications

Package Tube
ProductStatus Active
FETType N-Channel
Technology SiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss) 650 V
Current-ContinuousDrain(Id)@25°C 39A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 18V
RdsOn(Max)@IdVgs 78mOhm @ 13A, 18V
Vgs(th)(Max)@Id 5.6V @ 6.67mA
GateCharge(Qg)(Max)@Vgs 58 nC @ 18 V
Vgs(Max) +22V, -4V
InputCapacitance(Ciss)(Max)@Vds 852 pF @ 500 V
PowerDissipation(Max) 165W (Tc)
OperatingTemperature 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247N

Vue d'ensemble

Description

The SCT3060ALGC11 is a high-performance silicon carbide (SiC) MOSFET, designed for power applications such as switching power supplies, motor drives, and renewable energy systems. It features a high voltage rating of 600V and a current handling capability up to 30A, making it suitable for demanding environments. The device offers low on-resistance (R_DS(on)), enabling efficient operation with reduced power losses and heat generation.
Its fast switching speeds contribute to improved overall system efficiency, which is particularly beneficial in applications requiring high-frequency operation. The SCT3060ALGC11 is housed in a TO-247 package, facilitating effective thermal management and ease of integration into existing circuits.
Additionally, the use of silicon carbide technology allows for higher thermal conductivity and better performance under high temperatures compared to traditional silicon-based devices. Overall, the SCT3060ALGC11 is an ideal choice for modern power electronics, promoting energy efficiency and reliability in various industrial and commercial applications.

Features

The SCT3060ALGC11 is a high-performance Silicon Carbide (SiC) MOSFET designed for power applications. Key features include:
1. High Voltage Rating: It offers a maximum drain-source voltage (V_DS) of 600V, making it suitable for various high-voltage applications.
2. Low On-Resistance: The device provides a low on-resistance (R_DS(on)), which reduces power losses and improves efficiency.
3. Fast Switching Speed: It enables high-frequency operation, beneficial for applications like switch-mode power supplies and inverters.
4. Thermal Stability: With excellent thermal conductivity, it can operate at elevated temperatures, enhancing reliability.
5. Robustness: The SCT3060ALGC11 features a built-in gate protection, enhancing durability against voltage spikes.
6. Easy to Drive: It is compatible with standard gate drive circuits, simplifying integration into existing designs.
These characteristics make the SCT3060ALGC11 suitable for applications such as renewable energy systems, electric vehicles, and industrial power supplies.

Package

The SCT3060ALGC11 is packaged in a TO-220 form factor. This type of package is commonly used for power semiconductors, providing efficient thermal management and ease of mounting on heatsinks.

Pinout

The SCT3060ALGC11 is a silicon controlled rectifier (SCR) with a total of 4 pins. The pin configuration and functions are as follows:
1. Anode (A1) - This pin is connected to the anode terminal of the SCR.
2. Anode (A2) - This is the second anode connection, allowing for high current handling.
3. Gate (G) - This pin is used to trigger the SCR into conduction; applying a small current here allows the device to control a much larger load.
4. Cathode (K) - This pin is the cathode terminal, where current exits the SCR.
The SCT3060ALGC11 is designed for applications such as power control and switching in AC circuits.

Manufacturer

The SCT3060ALGC11 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs, develops, manufactures, and markets a wide range of products, including integrated circuits (ICs), discrete components, and sensors, primarily for automotive, industrial, and consumer markets. The company is known for its innovation in technologies such as microcontrollers, power management, and analog devices, and it plays a significant role in the development of solutions for the Internet of Things (IoT), smart mobility, and energy efficiency. STMicroelectronics is headquartered in Geneva, Switzerland, and operates worldwide, contributing to advancements in electronics and various applications across multiple sectors.

Application

The SCT3060ALGC11 is a high-voltage, high-speed silicon carbide (SiC) MOSFET commonly used in applications such as power converters, electric vehicles, renewable energy systems, and industrial power supplies. Its features enable efficient switching, thermal management, and increased power density, making it ideal for high-efficiency power electronics and high-temperature environments.

Equivalent

The SCT3060ALGC11 is a silicon carbide (SiC) MOSFET. Equivalent products include the STMicroelectronics STP3065K5, Wolfspeed C3M0065090D, and the Infineon IKW30N60T2. Always verify specifications, such as voltage, current, and thermal characteristics, to ensure compatibility for your specific application.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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