SCT3030ALGC11

Les images sont à titre de référence seulement

SCT3030ALGC11

SICFET N-CH 650V 70A TO247N

100% original & Nouveau

24 heures prêtes à expédier

Garantie 365 jours

RFQ et Obtenez plus de rabais

Spécifications

Part Status Active
Base Product Number SCT3030
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 39mOhm @ 27A, 18V
Vgs(th) (Max) @ Id 5.6V @ 13.3mA
Gate Charge (Qg) (Max) @ Vgs 104 nC @ 18 V
Vgs (Max) +22V, -4V
Input Capacitance (Ciss) (Max) @ Vds 1526 pF @ 500 V
Power Dissipation (Max) 262W (Tc)
Operating Temperature 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247N
Package TO-247-3
Packaging Tube

Vue d'ensemble

Description

SCT3030ALGC11 is a silicon-controlled rectifier (SCR) designed for high-power applications, particularly in switching and control circuits. It features a voltage rating of 300V and a current rating of 30A, making it suitable for use in various industrial and electronic applications, including motor control, lighting, and power regulation. The device operates by allowing current to flow in one direction when triggered by a gate signal, and it remains conducting until the current drops below a certain threshold. SCT3030ALGC11 is characterized by its robust construction, ensuring reliability in demanding environments. It is typically housed in a TO-220 package, facilitating easy integration into circuits. With its fast switching capabilities and high thermal stability, it is a preferred choice for designers looking for efficient control of AC and DC loads.

Features

The SCT3030ALGC11 is a high-voltage, high-speed N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: Capable of handling high voltages, typically up to 30V.
2. Low On-Resistance: Offers low RDS(on), which enhances efficiency by reducing power loss when in the on-state.
3. Fast Switching Speed: Suitable for high-frequency applications, enabling quick turn-on and turn-off times.
4. Thermal Performance: Designed with adequate thermal characteristics to manage heat dissipation effectively.
5. Package Type: Available in a compact surface-mount package, facilitating easy integration into electronic circuits.
6. Gate Threshold Voltage: Features a low gate threshold for efficient operation with lower drive voltages.
7. Applications: Ideal for power management, DC-DC converters, and other switching applications.
These characteristics make the SCT3030ALGC11 an excellent choice for designers looking for reliable performance in compact and efficient designs.

Package

The SCT3030ALGC11 is packaged in a TO-220 form factor, which is a type of metal package designed for power transistors. This packaging allows for efficient heat dissipation and is suitable for high-power applications.

Pinout

The SCT3030ALGC11 is a high-voltage MOSFET with a total of 8 pins. Here are the pin functions:
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The terminal through which the current enters the MOSFET.
4. Gate-Source (G-S): Typically used for driving the gate.
5. Drain-Source (D-S): Represents the main current path.
6. D1 / D2: Often for internal protection diodes or additional functionality.
The SCT3030ALGC11 is primarily designed for applications requiring high efficiency and fast switching, commonly used in power management, motor drives, and power converters.

Manufacturer

The SCT3030ALGC11 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in designing and manufacturing a wide range of semiconductor products, including microcontrollers, power management devices, and sensors, among others. The company serves various industries, including automotive, industrial, personal electronics, and communication. Headquartered in Geneva, Switzerland, STMicroelectronics is known for its commitment to innovation and sustainability in the semiconductor sector, emphasizing energy-efficient technologies and advanced manufacturing processes.

Application

The SCT3030ALGC11 is a silicon carbide (SiC) MOSFET primarily used in high-efficiency power electronics applications. Its main areas include electric vehicles, renewable energy systems (solar inverters, wind power), industrial motor drives, and high-voltage power supply systems. Its high switching speed and thermal performance make it suitable for applications requiring efficient energy conversion and management.

Equivalent

The SCT3030ALGC11 is an N-channel MOSFET. Equivalent products include the IRF3205, STP75NF75, and BSS138. Always verify specifications like voltage, current, and Rds(on) to ensure compatibility for your application.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

Similaire