SCT2H12NZGC11

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SCT2H12NZGC11

SICFET N-CH 1700V 3.7A TO3PFM

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Spécifications

Package Tube
ProductStatus Active
FETType N-Channel
Technology SiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss) 1700 V
Current-ContinuousDrain(Id)@25°C 3.7A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 18V
RdsOn(Max)@IdVgs 1.5Ohm @ 1.1A, 18V
Vgs(th)(Max)@Id 4V @ 900µA
GateCharge(Qg)(Max)@Vgs 14 nC @ 18 V
Vgs(Max) +22V, -6V
InputCapacitance(Ciss)(Max)@Vds 184 pF @ 800 V
PowerDissipation(Max) 35W (Tc)
OperatingTemperature 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-3PFM

Vue d'ensemble

Description

The SCT2H12NZGC11 is a silicon carbide (SiC) MOSFET designed for high-efficiency power applications. With a voltage rating of 1200V and a current rating of 2A, it is optimized for fast switching and reduced conduction losses, making it suitable for use in power converters, inverters, and other high-voltage applications. The device features low on-resistance and a low gate charge, which enhances its performance in high-frequency operation.
Its SiC technology offers advantages over traditional silicon devices, including improved thermal performance and reduced size for power management systems. The SCT2H12NZGC11 is particularly beneficial for applications in renewable energy systems, electric vehicles, and industrial machinery, where efficient energy conversion is critical. Overall, this MOSFET represents a robust solution for modern power electronics, enabling designers to achieve higher efficiency and reliability in their applications.

Features

The SCT2H12NZGC11 is a silicon carbide (SiC) MOSFET designed for high-efficiency power conversion applications. Key features include:
1. Voltage Rating: 1200V, suitable for high-voltage applications.
2. Current Rating: Capable of handling up to 50A, providing robust performance under load.
3. Low On-Resistance: Offers low R_DS(on), resulting in reduced conduction losses and improved thermal performance.
4. High Switching Speed: Facilitates fast switching operations, enhancing overall efficiency in power conversion.
5. Thermal Performance: Excellent thermal conductivity, allowing for effective heat dissipation.
6. Gate Threshold Voltage: Compatible with standard gate drive levels, simplifying circuit design.
7. Robustness: Offers superior reliability and durability in demanding environments.
These features make the SCT2H12NZGC11 ideal for applications in renewable energy, electric vehicles, and industrial power supplies, where efficiency and performance are critical.

Package

The SCT2H12NZGC11 is packaged in a TO-220 format, which is commonly used for power semiconductor devices. This packaging provides efficient thermal management and is suitable for a variety of applications in power electronics.

Pinout

The SCT2H12NZGC11 is a silicon carbide (SiC) MOSFET with a pin count of 8. It is designed for high efficiency and high-temperature applications, commonly used in power electronics.
Typically, the pin configuration includes:
1. Gate (G) - for controlling the MOSFET.
2. Drain (D) - the output terminal where the load is connected.
3. Source (S) - the terminal connected to the ground or negative supply.
4. Body (B) - an internal diode that can be used in switching applications.
The specific pin arrangement may vary slightly depending on the manufacturer’s packaging, so it’s advisable to consult the datasheet for detailed pin mapping and electrical characteristics.
This device is utilized in applications such as power converters, inverters, and motor drives, providing benefits like reduced switching losses and enhanced thermal performance.

Manufacturer

The SCT2H12NZGC11 is manufactured by Semikron, a company specializing in power semiconductor components. Semikron designs and produces a wide range of products including power modules, thyristors, diodes, and IGBTs (Insulated Gate Bipolar Transistors). Established in 1951 and headquartered in Nuremberg, Germany, Semikron serves various industries such as renewable energy, industrial automation, and electric vehicles, focusing on solutions for power electronics and energy efficiency. The company is recognized for its innovation and quality in the field of power semiconductor technology.

Application

The SCT2H12NZGC11 is a silicon carbide (SiC) MOSFET, primarily used in high-efficiency power electronics applications. Its key areas include electric vehicles, renewable energy systems (like solar inverters), power supplies, and industrial motor drives. The device offers high thermal conductivity, fast switching speeds, and high voltage operation, making it suitable for applications requiring efficient power conversion and thermal management.

Equivalent

The SCT2H12NZGC11 chip is an N-channel MOSFET commonly used in power applications. Equivalent products include:
1. SCT2H12NZGC10
2. SCT2H12NZGC12
3. IPB180N15N3 G
4. FDPF180N15
5. IRF180
6. STP16NF06
Always verify specifications like voltage, current ratings, and package type before substitution.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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