SCB13H4G160AF-11M

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SCB13H4G160AF-11M

  • FabricantUnilc
  • Mfr. Partie #SCB13H4G160AF-11M
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  • En stock17351

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Vue d'ensemble

Description

The SCB13H4G160AF-11M is a specific model of dynamic random-access memory (DRAM) chip, commonly used in various electronic devices for high-speed data storage and processing. It typically features a capacity of 4 gigabits (GB) and operates under the DDR3 (Double Data Rate 3) technology, ensuring efficient performance for computing tasks.
Key specifications often include a 1600 MT/s (mega transfers per second) data rate, which optimizes bandwidth for applications such as desktops, laptops, and servers. The chip is constructed using advanced semiconductor technology, ensuring reliability and durability.
This DRAM is designed for compatibility with a variety of platforms and is often packaged in a standard form factor to facilitate integration into circuit boards. Its low power consumption makes it suitable for both mobile and stationary devices, aligning with current trends in energy efficiency.
Overall, the SCB13H4G160AF-11M offers a balance of speed and efficiency, making it a popular choice for manufacturers aiming to enhance the performance of their electronic devices.

Features

The SCB13H4G160AF-11M is a DRAM memory module from the SCB series, specifically designed for various applications requiring reliable and efficient data storage. Key features include:
1. Capacity: 4GB capacity, suitable for standard computing needs.
2. Type: DDR3 SDRAM, delivering high-speed data transfer rates.
3. Speed: Operates at a clock speed of 1600 MT/s (megatransfers per second).
4. Form Factor: SO-DIMM (Small Outline Dual In-line Memory Module), ideal for laptops and compact systems.
5. Voltage: Typically operates at 1.5V, which helps in power efficiency.
6. Compatibility: Compatible with a wide range of motherboards and devices that support DDR3 memory.
7. Error Correction: May support features like ECC (Error-Correcting Code), depending on the specific model.
This module is designed for optimal performance and stability in both consumer and enterprise applications.

Package

The SCB13H4G160AF-11M is typically packaged in a BGA (Ball Grid Array) format, which provides a compact design and efficient thermal performance, suitable for high-density applications.

Pinout

The SCB13H4G160AF-11M is a specific type of memory module, typically a DRAM or SRAM component. It generally features a pin count of 48 pins. The primary function of this module is to provide volatile memory storage, allowing for high-speed data access and temporary data retention while the device is powered on.
The memory is designed for use in applications requiring efficient data processing and storage, such as embedded systems, industrial automation, and consumer electronics. The "H4G160" part of the designation usually indicates the memory type and specifications, while "AF-11M" may refer to specific characteristics like speed and package type.
For precise details regarding the pin configuration and functionalities, consulting the manufacturer's datasheet is recommended.

Manufacturer

The SCB13H4G160AF-11M is manufactured by SK hynix, a South Korean semiconductor company. SK hynix is one of the largest manufacturers of memory chips in the world, specializing in the production of DRAM and NAND flash memory. The company serves a variety of sectors, including consumer electronics, mobile devices, and enterprise storage solutions. Founded in 1983, SK hynix has established itself as a key player in the global semiconductor industry, focusing on innovation and advanced technology development to meet the growing demand for high-performance memory solutions.

Application

The SCB13H4G160AF-11M is a high-performance, low-power SRAM (Static Random-Access Memory) chip typically used in applications such as mobile devices, automotive systems, industrial automation, and consumer electronics. It is ideal for cache memory, buffering, and temporary data storage in systems requiring fast access times and reliability. Its features make it suitable for embedded systems and applications where efficiency and speed are critical.

Equivalent

The SCB13H4G160AF-11M is a DDR3 SDRAM memory chip. Equivalent products include other DDR3 4Gbit (512MB) memory chips from manufacturers like Micron (MT41J128M16HA-15E), Samsung (K4B4G1646D-BYMA), and Hynix (H5TQ2G83CFR). Ensure compatibility with your specific application, considering speed, voltage, and pin configuration.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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