S34MS08G201BHI000

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S34MS08G201BHI000

IC FLASH 8GBIT PARALLEL 63BGA

  • Fabricant
  • Mfr. Partie #S34MS08G201BHI000
  • Paquet BGA-63
  • Fiche de données
  • En stock4829

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Spécifications

Package Tray
Series MS-2
ProductStatus Active
MemoryType Non-Volatile
MemoryFormat FLASH
Technology FLASH - NAND
MemorySize 8Gb (1G x 8)
MemoryInterface Parallel
WriteCycleTime-WordPage 45ns
AccessTime 45 ns
Voltage-Supply 1.7V ~ 1.95V
OperatingTemperature -40°C ~ 85°C (TA)
MountingType Surface Mount
Package/Case 63-VFBGA

Vue d'ensemble

Description

S34MS08G201BHI000 is a specific model of NAND flash memory produced by Cypress Semiconductor (now part of Infineon Technologies). It falls under the category of SLC (Single-Level Cell) NAND, which stores one bit of information per cell, offering high reliability and endurance. This model features a density of 8 Gb (gigabits) and is designed for applications requiring robust data retention and performance, such as automotive, industrial, and consumer electronics.
Key characteristics include a standard serial interface, support for various voltages, and advanced error correction capabilities. The device is optimized for fast read and write speeds, making it suitable for applications needing rapid data access and storage. The specific part number denotes unique features such as packaging and temperature range, essential for designers to ensure compatibility with their systems. Understanding the specifications and functionalities of S34MS08G201BHI000 is crucial for engineers and developers when integrating this memory into electronic designs.

Features

The S34MS08G201BHI000 is a 1 Gb (Gigabit) Synchronous Dynamic Random-Access Memory (SDRAM) device, typically used in various electronic applications, especially in consumer electronics and computing. Key features include:
1. Density: 1 Gb capacity, providing ample memory for various applications.
2. Data Bus Width: Often 8 bits, supporting efficient data transfer.
3. Operating Voltage: Typically operates at 1.8V, which helps in power efficiency.
4. Speed: Designed for high-speed operations, suitable for DDR (Double Data Rate) applications.
5. Package Type: Available in a compact FBGA (Fine Ball Grid Array) package, facilitating space-efficient designs.
6. Temperature Range: Usually supports industrial-grade temperature ranges, ensuring reliability under different environmental conditions.
7. Interface: Utilizes a synchronous interface for better performance and timing control.
These features make the S34MS08G201BHI000 suitable for applications in mobile devices, automotive systems, and embedded solutions.

Package

The S34MS08G201BHI000 is packaged in a 48-ball FBGA (Fine Ball Grid Array) package. This type of packaging is commonly used for memory devices due to its compact size and efficient thermal management.

Pinout

The S34MS08G201BHI000 is a NAND flash memory device from Micron Technology with a total pin count of 48 pins. This device features a 8GB (1G x 8) memory density and operates on a toggle DDR interface, which allows for high-speed data transfer.
Key functions of the pins include:
- Data I/O pins: Facilitate data transfer to and from the memory.
- Control pins: Include functions for command input, chip enable (CE), write protect (WP), and ready/busy signals.
- Address pins: Used to select memory locations within the device.
The device supports various operations like read, write, and erase, making it suitable for various applications in consumer electronics and industrial systems.

Manufacturer

The S34MS08G201BHI000 is manufactured by Micron Technology, Inc. Micron is a leading American producer of semiconductor devices, specializing in memory and storage solutions, including DRAM, NAND flash memory, and solid-state drives (SSDs). Founded in 1978 and headquartered in Boise, Idaho, Micron serves a wide range of industries, including computing, mobile, automotive, and consumer electronics. The company is recognized for its innovation in memory technologies and plays a significant role in the global semiconductor market.

Application

The S34MS08G201BHI000 is a NAND Flash memory device primarily used in applications such as smartphones, tablets, embedded systems, and industrial devices. Its high density and performance make it suitable for data storage in consumer electronics, automotive infotainment systems, and Internet of Things (IoT) devices. Additionally, it is ideal for applications requiring reliable non-volatile storage with fast read/write speeds.

Equivalent

The S34MS08G201BHI000 chip is a NAND flash memory device. Equivalent products include the Micron MT29F8G08ABAEAWP, Samsung K9GAG08U0M, and the Toshiba TH58TEG8D2FLA. Ensure compatibility by checking specifications such as density, package type, and interface before substitution.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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