S34MS04G100BHI000

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S34MS04G100BHI000

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  • Mfr. Partie #S34MS04G100BHI000
  • Paquet
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  • En stock3035

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Spécifications

Package / Case BGA-63
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 85 C
Series S34MS04G1
Packaging Tray
Brand SkyHigh Memory
Product Type NAND Flash
Factory Pack Quantity:Factory Pack Quantity 210
Subcategory Memory & Data Storage
Unit Weight 0.222226 oz
Mounting Style SMD/SMT
Moisture Sensitive Yes
Supply Voltage - Max 1.95 V
Supply Voltage - Min 1.7 V
Memory Size 4 Gbit
Interface Type Parallel
Organization 512 M x 8
Active Read Current - Max 20 mA
Supply Current - Max 20 mA
Product NAND Flash
Timing Type Asynchronous
Data Bus Width 8 bit
Architecture Multiplane
Memory Type NAND

Vue d'ensemble

Description

The S34MS04G100BHI000 is a NAND flash memory component produced by Cypress Semiconductor (now part of Infineon Technologies). It features a storage capacity of 4 gigabits (Gb) and adheres to the Serial NAND Flash interface standards. This component is designed for applications requiring non-volatile memory with high speed and reliability, such as consumer electronics, industrial applications, and embedded systems.
Key specifications typically include a high read and write performance, low power consumption, and support for various programming and erasing modes. The "BHI" in the part number generally indicates the specific package type and temperature range, while "000" may refer to production variants or revisions.
Overall, the S34MS04G100BHI000 is ideal for applications that demand robust data storage solutions with quick access times and endurance.

Features

The S34MS04G100BHI000 is a high-performance 4Gb (gigabit) NAND Flash memory device, designed primarily for mobile and embedded applications. Key features include:
1. Technology: It utilizes 3D NAND technology, enhancing storage density and performance while reducing power consumption.

2. Interface: Offers a Serial Peripheral Interface (SPI) for simple connectivity and integration into various systems.
3. Speed: High read and write speeds, suitable for applications requiring fast data access.
4. Endurance: Designed for high endurance, making it reliable for applications with numerous write and erase cycles.
5. Low Power Consumption: Optimized for low energy use, which is critical for battery-operated devices.
6. Temperature Range: Suitable for a wide operating temperature range, ensuring reliability in diverse environments.
7. Security Features: Supports advanced security features for data protection and integrity.
This device is ideal for applications such as IoT devices, wearables, and industrial automation.

Package

The S34MS04G100BHI000 is a NAND flash memory chip packaged in a 63-ball BGA (Ball Grid Array) configuration. This packaging type allows for efficient mounting on circuit boards, providing a compact footprint and good thermal performance.

Pinout

The S34MS04G100BHI000 is a NAND flash memory component from Micron Technology. It has a total pin count of 63 pins. The device is designed for embedded applications and features a Serial Peripheral Interface (SPI) for communication.
Key functions of the S34MS04G100BHI000 include:
1. Memory Storage: It provides 4 Gb (gigabits) of NAND flash memory, suitable for data storage applications.
2. Read and Write Operations: Supports multiple read and write cycles, allowing the storage of data.
3. Data Protection: Includes features for wear leveling and error correction to enhance reliability.
4. Low Power Consumption: Designed for efficient power usage in embedded systems.
These attributes make it suitable for use in various applications, including consumer electronics, automotive, and industrial devices.

Manufacturer

The S34MS04G100BHI000 is manufactured by SST (Silicon Storage Technology), which is a subsidiary of Microchip Technology Inc.. SST specializes in non-volatile memory solutions, particularly flash memory products. The company focuses on developing advanced memory technologies for various applications, including consumer electronics, automotive, and industrial sectors. Their products are known for high performance, reliability, and low power consumption, catering to a wide array of markets requiring innovative storage solutions.

Application

The S34MS04G100BHI000 is a 4Gbit NOR flash memory device commonly used in applications such as embedded systems, automotive electronics, consumer electronics, industrial automation, and telecommunications. It is ideal for firmware storage, code execution, and data retention in devices requiring fast access speeds and reliability.

Equivalent

The S34MS04G100BHI000 chip is a 4Gbit NOR Flash memory. Equivalent products include the Micron MT25QL04GCBB8E, Winbond W25Q40CL, and Cypress S25FL216K. Always verify specific compatibility and specifications for your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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