S34ML04G100BHI000

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S34ML04G100BHI000

IC FLASH 4GBIT PARALLEL 63BGA

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Spécifications

Package Bulk
Series ML-1
ProductStatus Active
MemoryType Non-Volatile
MemoryFormat FLASH
Technology FLASH - NAND
MemorySize 4Gb (512M x 8)
MemoryInterface Parallel
WriteCycleTime-WordPage 25ns
Voltage-Supply 2.7V ~ 3.6V
OperatingTemperature -40°C ~ 85°C (TA)
MountingType Surface Mount
Package/Case 63-VFBGA

Vue d'ensemble

Description

The S34ML04G100BHI000 is a NAND flash memory chip produced by Cypress Semiconductor (now part of Infineon Technologies). It is designed for high-performance data storage solutions, featuring a 4 Gb (gigabit) capacity. This memory device utilizes a single-level cell (SLC) architecture, which provides enhanced reliability and speed compared to multi-level cell (MLC) technology.
The chip operates with a supply voltage of 1.8V, making it suitable for low-power applications. It supports various interfaces, including ONFI (Open NAND Flash Interface) and a high-speed serial interface, allowing it to be integrated into a wide range of electronic devices such as smartphones, tablets, and industrial applications.
Key features include fast read and write speeds, robust data retention, and endurance, making it ideal for applications requiring reliable storage solutions. The S34ML04G100BHI000 is often selected for its scalability and compatibility with existing designs, making it a versatile choice for manufacturers looking to incorporate NAND flash memory into their products.

Features

The S34ML04G100BHI000 is a 4Gb (Gigabit) NAND Flash memory device, specifically utilizing the SLC (Single-Level Cell) technology for high reliability and performance. It is part of the S34ML series from Cypress Semiconductor. Key features include:
1. Interface: It supports a parallel interface, suitable for various applications in consumer electronics and industrial systems.
2. Power Supply: Operates with a voltage range of 2.7V to 3.6V, ensuring compatibility with most low-power applications.
3. Speed: Offers fast read and write speeds, making it ideal for applications requiring quick data access.
4. Endurance: High endurance with a significant number of program/erase cycles, which enhances the longevity of the memory.
5. Temperature Range: Designed to operate across a wide temperature range, suitable for both commercial and industrial environments.
6. Package: Available in a compact BGA (Ball Grid Array) package, facilitating efficient space utilization on PCBs.
This device is suitable for applications in mobile devices, automotive systems, and other embedded systems needing reliable storage solutions.

Package

The S34ML04G100BHI000 is a NAND flash memory chip packaged in a 48-ball BGA (Ball Grid Array) format. This compact package type is designed for efficient space utilization in electronic devices, allowing for high-density memory solutions.

Pinout

The S34ML04G100BHI000 is a NAND flash memory chip from Macronix. It features a total of 48 pins.
The primary functions of these pins include:
- Power Supply: VCC and VSS pins provide power to the chip.
- Data I/O: Multiple pins (D0-D7) are for data input/output, facilitating data transfer.
- Control Signals: Pins such as RE#, WE#, and CE# are used for read, write, and chip enable operations, respectively.
- Addressing: Address pins (A0-A20) are used to select memory locations.
- Status Outputs: Some pins may serve as status indicators for operations, such as busy or ready signals.
The S34ML04G100BHI000 is designed for high-density storage applications, offering reliability and performance suitable for various embedded systems.

Manufacturer

The S34ML04G100BHI000 is a flash memory device manufactured by Micron Technology, Inc. Micron is a leading global provider of advanced semiconductor solutions, specializing in memory and storage technologies, including DRAM, NAND flash memory, and solid-state drives (SSDs). Founded in 1978 and headquartered in Boise, Idaho, Micron serves a wide range of markets, including consumer electronics, computing, mobile devices, and automotive applications. The company is known for its innovation in memory technologies and plays a significant role in the global semiconductor industry.

Application

The S34ML04G100BHI000 is a 4Gb (gigabit) NOR Flash memory device used primarily in embedded systems. Its application areas include consumer electronics, automotive systems, industrial automation, networking equipment, and IoT devices. It provides high-speed data storage for firmware, boot code, and data logging, ensuring reliable performance in applications requiring fast read access and data retention.

Equivalent

The S34ML04G100BHI000 is a NAND flash memory chip. Equivalent products include:
1. Micron MT29F4G01ABAEAWP
2. Samsung K9GAG08U0M
3. Hynix H26M31001G5
4. Toshiba TC58NVG4D2HBAI4
It's important to verify compatibility in terms of specifications like voltage, interface, and density before substitution.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

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1. PayPal

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