S34ML01G200BHI003

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S34ML01G200BHI003

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Spécifications

Brand SkyHigh Memory
Product Type NAND Flash
Subcategory Memory & Data Storage
Series S34ML01G2
Mounting Style SMD/SMT
Interface Type Parallel
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 85 C
Supply Voltage - Min 2.7 V
Supply Voltage - Max 3.6 V
Memory Size 1 Gbit
Package / Case BGA-63
Organization 128 M x 8
Packaging Reel
Active Read Current - Max 30 mA
Supply Current - Max 30 mA
Product NAND Flash
Factory Pack Quantity:Factory Pack Quantity 2300
Moisture Sensitive Yes
Data Bus Width 8 bit
Timing Type Asynchronous
Architecture Multiplane
Memory Type NAND

Vue d'ensemble

Description

S34ML01G200BHI003 is a NAND flash memory device produced by Cypress Semiconductor (now part of Infineon Technologies). It features a capacity of 1 gigabit (128 megabytes) and is designed for use in various applications such as consumer electronics, industrial systems, and automotive devices. This particular model utilizes a 1.8V power supply, offering low power consumption, making it suitable for battery-operated devices.
The device employs a serial interface for data transfer, ensuring high-speed access and efficient data storage solutions. It supports multiple programming and erase cycles, enhancing its longevity and reliability in a range of applications. Additionally, the S34ML series is known for its robust performance in harsh environments, making it ideal for mission-critical applications. Its compact form factor and advanced features make it a popular choice among designers looking for efficient memory solutions in embedded systems.

Features

The S34ML01G200BHI003 is a 1 Gigabit (128MB) NAND Flash memory device from Cypress Semiconductor. It uses a Single-Level Cell (SLC) architecture, providing high reliability and endurance. Key features include:
1. Interface: Supports a Serial Peripheral Interface (SPI) for easy integration into various applications.
2. High Performance: Offers fast read and write speeds, ideal for applications requiring quick data access.
3. Power Efficiency: Designed for low power consumption, making it suitable for battery-operated devices.
4. Endurance and Reliability: Supports a high number of program/erase cycles, enhancing longevity.
5. Data Protection: Features mechanisms for data integrity, including error correction and wear leveling.
6. Temperature Range: Operates reliably across a broad temperature range, ensuring performance in diverse environments.
This device is commonly used in embedded systems, industrial applications, and consumer electronics, where high performance and reliability are critical.

Package

The S34ML01G200BHI003 is a NAND flash memory device packaged in a 63-ball BGA (Ball Grid Array) package. This packaging allows for efficient space utilization and thermal performance, making it suitable for various applications in consumer electronics and industrial devices.

Pinout

The S34ML01G200BHI003 is a 1-gigabit (128MB) NAND Flash memory chip from Cypress Semiconductor (now part of Infineon Technologies). It features a total of 48 pins. The pin functions include:
- Data Input/Output Pins (DQ0-DQ7): 8 bi-directional data lines for read and write operations.
- Command/Address Pins (A0-A21): Used to input commands and addresses for accessing memory locations.
- Chip Enable (CE): Activates the chip for operation.
- Write Enable (WE): Controls write operations.
- Read Enable (RE): Controls read operations.
- Ready/Busy (R/B): Indicates the status of the device (ready or busy).
- Vcc: Power supply input.
- Vss: Ground connection.
- Block Protection (BP): Protects specified blocks from being programmed or erased.
- Reset (RESET): Resets the device.
This configuration allows for effective communication and control of the NAND Flash memory.

Manufacturer

The S34ML01G200BHI003 is a NAND flash memory device manufactured by Micron Technology, Inc. Micron is a leading American semiconductor company that specializes in memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron produces a wide range of products, including DRAM, NAND flash memory, and solid-state drives (SSDs). The company serves various markets, including consumer electronics, mobile devices, and data centers, and is known for its innovation in memory technology. Micron plays a key role in enabling advancements in computing, mobile technology, and cloud computing.

Application

The S34ML01G200BHI003 is a NAND flash memory chip primarily used in applications such as mobile devices, consumer electronics, automotive systems, and industrial equipment. Its high storage capacity and fast read/write speeds make it suitable for solid-state drives (SSDs), embedded systems, and data storage solutions in various electronic devices, enhancing performance and reliability.

Equivalent

The S34ML01G200BHI003 chip is a 1 Gb (128 MB) NAND flash memory. Equivalent products include the Micron MT29F1G01ABAF, Samsung K9GAG08U0M, and Toshiba TC58NGB0S3H. Check for specific features like interface type and voltage to ensure compatibility.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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