S34ML01G100BHI000

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S34ML01G100BHI000

IC FLASH 1GBIT PARALLEL 63BGA

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Spécifications

Series ML-1
Part Status Active
DigiKey Programmable Not Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 1Gbit
Memory Organization 128M x 8
Memory Interface Parallel
Write Cycle Time - Word, Page 25ns
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 63-VFBGA
Supplier Device Package 63-BGA (11x9)
Base Product Number S34ML01

Vue d'ensemble

Description

The S34ML01G100BHI000 is a 1 Gigabit (Gb) NAND Flash memory chip produced by Cypress Semiconductor, now part of Infineon Technologies. It is designed for high-performance applications in consumer electronics, automotive, and industrial markets. This memory chip uses a Serial Peripheral Interface (SPI) for efficient data transfer, making it suitable for embedded systems that require fast boot times and low power consumption.
Key features include a small form factor, advanced error correction capabilities, and support for multiple programming modes. It typically comes in a compact WSON or BGA package, facilitating easy integration into various electronic designs. The S34ML01G100BHI000 is characterized by its reliability and endurance, making it ideal for applications requiring frequent read/write cycles and data retention.
Overall, this NAND Flash memory offers a blend of performance and efficiency, catering to the needs of modern electronic applications.

Features

The S34ML01G100BHI000 is a NAND flash memory chip from the S34ML series, designed for embedded applications. Key features include:
1. Density: 1 Gb (Gigabit) capacity.
2. Interface: Supports SPI (Serial Peripheral Interface), allowing easy integration with microcontrollers.
3. Voltage Range: Operates typically at 2.7V to 3.6V, with low power consumption, making it suitable for battery-operated devices.
4. Page Size: 2 KB page size with a typical organization of 2048 pages per block.
5. Endurance: Designed for high endurance, typically supporting 10,000 write/erase cycles per cell.
6. Data Retention: Provides a data retention period of up to 20 years at 55°C.
7. Additional Features: Includes error correction code (ECC) capabilities for improved data integrity.
The S34ML01G100BHI000 is ideal for applications such as consumer electronics, automotive, and industrial devices requiring reliable and efficient data storage solutions.

Package

The S34ML01G100BHI000 is a NAND flash memory device packaged in a 1.8V, 8-ball BGA (Ball Grid Array) format. This compact package design is suitable for various applications requiring efficient space and reliable performance.

Pinout

The S34ML01G100BHI000 is a 1Gb (Gigabit) NAND Flash memory device produced by Cypress Semiconductor. It comes in a 48-ball BGA (Ball Grid Array) package, which has a total of 48 pins (balls).
The primary functions of the pins include:
1. Data I/O: For data input and output during read and write operations (DQ0-DQ7).
2. Control Signals:
- WE# (Write Enable): Initiates write operations.
- RE# (Read Enable): Initiates read operations.
- CE# (Chip Enable): Activates the memory chip.
- ALE (Address Latch Enable): Latches the address during command cycles.
- CLE (Command Latch Enable): Latches commands sent to the device.
3. Address Inputs: Used to specify memory locations (A0-A25).
4. Ground and Power Pins: Provide necessary power supply and grounding for the chip.
Overall, the S34ML01G100BHI000 is designed for use in a variety of applications, including mobile devices and embedded systems, where reliable data storage is required.

Manufacturer

The S34ML01G100BHI000 is manufactured by Micron Technology, Inc. Micron is a leading global provider of innovative memory and storage solutions, specializing in DRAM, NAND flash memory, and NOR flash memory technologies. Founded in 1978 and headquartered in Boise, Idaho, Micron serves a wide range of markets, including computing, mobile, automotive, and industrial sectors. The company focuses on developing high-performance memory and storage products that enable advancements in data storage and processing across various applications. Micron is recognized for its commitment to research and development, sustainability, and enhancing data-driven technologies.

Application

The S34ML01G100BHI000 is a 1 Gbit NAND Flash memory chip, primarily used in applications such as mobile devices, consumer electronics, solid-state drives (SSDs), IoT devices, and industrial automation. Its features support high-density data storage and enable fast read/write operations, making it suitable for multimedia applications, data logging, and firmware storage.

Equivalent

The S34ML01G100BHI000 chip, a 1Gb NAND Flash memory, has several equivalent products, including:
1. Micron MT29F1G01ABAEAWP
2. Samsung K9GAG08U0M
3. Hynix H27UCG8T2BTR-BC
Always verify specifications and compatibility for your specific application before selecting an equivalent.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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