S29GL512T10TFI010

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S29GL512T10TFI010

IC FLASH 512MBIT PARALLEL 56TSOP

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Spécifications

Package Tray
Series GL-T
ProductStatus Active
MemoryType Non-Volatile
MemoryFormat FLASH
Technology FLASH - NOR
MemorySize 512Mb (64M x 8)
MemoryInterface Parallel
WriteCycleTime-WordPage 60ns
AccessTime 100 ns
Voltage-Supply 2.7V ~ 3.6V
OperatingTemperature -40°C ~ 85°C (TA)
MountingType Surface Mount
Package/Case 56-TFSOP (0.724, 18.40mm Width)

Vue d'ensemble

Description

The S29GL512T10TFI010 is a 512 Mb (64 MB) NOR flash memory device manufactured by Cypress Semiconductor (now part of Infineon Technologies). It features a parallel interface and is designed for high-density storage in consumer and industrial applications, including automotive, networking, and embedded systems.
Key characteristics include:
- Architecture: 19nm technology, offering high performance and low power consumption.
- Access Speed: Up to 100 ns, facilitating quick read operations.
- Voltage: Operates at 3.0V to 3.6V, with an extended temperature range suitable for various environments.
- Endurance: Supports a high number of program/erase cycles, typically around 100,000 cycles.
- Data Retention: Retains data for at least 20 years.
The device supports features like simultaneous read/write operations, and it is often used in applications that require reliable data storage with fast access times.

Features

The S29GL512T10TFI010 is a 512 Mb (64 MB) NOR Flash memory device from Cypress Semiconductor (now part of Infineon Technologies). Key features include:
1. Density: 512 Megabits (64 Megabytes) of storage.
2. Interface: Parallel interface for easy integration.
3. Access Speed: Supports up to 100 ns read access time.
4. Voltage Supply: Operates at a voltage of 3.0 to 3.6 V.
5. Endurance: Offers a program/erase cycle endurance of 100,000 cycles.
6. Data Retention: Guarantees data retention of 20 years at 125°C.
7. Temperature Range: Available in commercial (-40°C to 85°C) and industrial (-40°C to 125°C) temperature ranges.
8. Sector Architecture: Features a sector architecture with multiple sectors for flexible memory management.
9. Command Set: Supports standard NOR Flash commands for programming and erasing.
This device is suited for applications like automotive, industrial, and consumer electronics requiring reliable non-volatile memory.

Package

The S29GL512T10TFI010 is packaged in a TSOP (Thin Small Outline Package), specifically a 48-pin TSOP. This type of package is designed for surface mounting and is commonly used in memory devices.

Pinout

The S29GL512T10TFI010 is a 512 Mb (64 MB) NOR flash memory device from Spansion (now part of Cypress Semiconductor). It has a total of 64 pins.
Key functions include:
- Data I/O Pins (DQ0-DQ7): These are used for data input and output during read and write operations.
- Address Pins (A0-A21): These pins are used to select memory addresses for read or write operations.
- Control Pins:
- Chip Enable (CE): Activates the chip.
- Write Enable (WE): Controls write operations.
- Output Enable (OE): Enables data output.
- Reset (RESET): Resets the device.
- Program/Erase (BYTE#): Selects the mode for programming or erasing.

The device supports asynchronous read and offers features like sector erase capability, making it suitable for embedded applications.

Manufacturer

The S29GL512T10TFI010 is manufactured by Cypress Semiconductor Corporation, which is now part of Infineon Technologies AG after its acquisition in 2020. Cypress Semiconductor specializes in embedded system solutions, focusing on memory, microcontrollers, and connectivity. The company is known for its Flash memory products, particularly NOR Flash, which is used in a variety of applications such as automotive, industrial, and consumer electronics. Infineon, the parent company, is a leading global semiconductor manufacturer, providing a wide range of products that enhance energy efficiency, mobility, and security in various sectors, including automotive, industrial, and IoT (Internet of Things).

Application

The S29GL512T10TFI010 is a 512 Mb (64 MB) NOR Flash memory chip, commonly used in applications such as embedded systems, automotive electronics, industrial control, consumer electronics, and networking equipment. Its features support firmware storage, code execution, and data logging, enabling reliable non-volatile data retention and fast read access in various devices.

Equivalent

The S29GL512T10TFI010 is a 512Mb NOR Flash memory chip. Equivalent products include:
1. Micron MT28EW512ABA1
2. Winbond W25N512JV
3. Intel J3D512M
4. Cypress S29GL512N10TFI010
Ensure compatibility based on parameters such as voltage, speed, and package type before substitution.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

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1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

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