S29GL01GS10TFI010

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S29GL01GS10TFI010

IC FLASH 1GBIT PARALLEL 56TSOP

  • Fabricant
  • Mfr. Partie #S29GL01GS10TFI010
  • Paquet PG-TSOP-56
  • Fiche de données
  • En stock5167

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Spécifications

Package Tray
Series GL-S
ProductStatus Active
MemoryType Non-Volatile
MemoryFormat FLASH
Technology FLASH - NOR
MemorySize 1Gb (64M x 16)
MemoryInterface Parallel
WriteCycleTime-WordPage 60ns
AccessTime 100 ns
Voltage-Supply 2.7V ~ 3.6V
OperatingTemperature -40°C ~ 85°C (TA)
MountingType Surface Mount
Package/Case 56-TFSOP (0.724, 18.40mm Width)

Vue d'ensemble

Description

The S29GL01GS10TFI010 is a 1 Gigabit (128 Megabytes) NOR Flash memory device manufactured by Spansion (now part of Cypress Semiconductor). It features a single-chip architecture and is designed for high-performance applications requiring fast read/write access and reliable data retention. The device supports a wide operating voltage range (typically 2.7V to 3.6V) and offers high-speed read capabilities (up to 108 MHz) along with fast programming and erase times.
This memory type is commonly used in embedded systems, automotive applications, and consumer electronics due to its ability to execute code directly from Flash (XIP) and its endurance ratings of up to 100,000 program/erase cycles. The S29GL01GS10TFI010 supports multiple programming modes, including asynchronous and synchronous operations, and is available in various package types for flexibility in design. Its robust features make it suitable for applications needing long-term data retention and reliability.

Features

The S29GL01GS10TFI010 is a NOR Flash memory device manufactured by Cypress Semiconductor (now part of Infineon Technologies). Key features include:
- Memory Density: 1 Gb (128 MB) capacity.
- Organization: 128M x 8 bits or 64M x 16 bits, allowing flexible data handling.
- Interface: Parallel interface for easy integration with various microcontrollers.
- Access Time: Offers fast read access times, typically around 100 ns.
- Sector Architecture: Supports multiple sectors (e.g., 64 KB sectors) for efficient memory management and data erasure.
- Erase Types: Supports sector, block, and chip erase functionalities.
- Endurance: Typically rated for 100,000 program/erase cycles per sector.
- Data Retention: Designed for a data retention period of up to 20 years.
- Voltage Range: Operates at a supply voltage of 2.7V to 3.6V.
These features make the S29GL01GS10TFI010 suitable for applications in consumer electronics, automotive, and industrial systems where reliable and fast memory is crucial.

Package

The S29GL01GS10TFI010 is packaged in a 48-pin TSOP (Thin Small Outline Package). This package type is optimized for space efficiency and is commonly used in flash memory applications.

Pinout

The S29GL01GS10TFI010 is a 1 Gigabit (128 MB) NOR Flash memory device from Cypress Semiconductor (now part of Infineon Technologies). It features a 32-pin TSOP (Thin Small Outline Package) configuration.
Pin Count:
- 32 pins
Key Functions:
- Data I/O Pins: 8 data lines (DQ0 to DQ7) for data input and output.
- Address Pins: Used for addressing memory locations.
- Control Pins:
- CE (Chip Enable): Activates the device.
- OE (Output Enable): Enables data output.
- WE (Write Enable): Initiates write operations.
- RESET: Resets the device.
- Vcc and Vss: Power supply and ground connections.
This device supports various features such as uniform sector architecture, read, write, and erase functions, suitable for embedded applications.

Manufacturer

The S29GL01GS10TFI010 is manufactured by Spansion, a company that specializes in flash memory solutions. Spansion, which was formed from the merger of AMD's and Fujitsu's flash memory businesses, focuses on producing NAND and NOR flash memory products used in a variety of applications, including consumer electronics, automotive, and industrial systems. The company is known for its high-performance memory solutions and is a key player in the semiconductor industry, providing products that enhance the functionality and performance of electronic devices.

Application

The S29GL01GS10TFI010 is a 1 Gb (128 MB) NOR Flash memory chip used in various applications, including embedded systems, automotive electronics, telecommunications, and consumer electronics. It is ideal for firmware storage, code execution, and data retention in devices such as smartphones, tablets, IoT devices, and networking equipment. Its features support fast read speeds and reliable data storage, making it suitable for applications requiring quick access and frequent updates.

Equivalent

The S29GL01GS10TFI010 is a 1 Gb (128 MB) NOR Flash memory chip. Equivalent products include the Micron MT29F1G01ABAEAWP, Winbond W25N01GV, and Intel E28F128J3A. When selecting an equivalent, ensure compatibility in terms of pin configuration, voltage, memory architecture, and performance specifications.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

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3. Transfert bancaire

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