RSD050N10TL

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RSD050N10TL

MOSFET N-CH 100V 5A CPT3

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Spécifications

Part Status Last Time Buy
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 530 pF @ 25 V
Power Dissipation (Max) 15W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package CPT3
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number RSD050

Vue d'ensemble

Description

The RSD050N10TL is a high-performance N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for various applications, including power management and switching. It features a maximum drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 50A, making it suitable for high-efficiency circuits.
This MOSFET is characterized by low on-resistance (RDS(on)), which minimizes conduction losses and enhances thermal performance. Its fast switching capabilities allow for efficient operation in high-frequency applications. The device is housed in a TO-220 package, providing robust thermal management and ease of integration into electronic designs.
Key applications include power supplies, motor drives, and inverters. The RSD050N10TL is well-suited for use in automotive, industrial, and consumer electronics, where efficiency, reliability, and compact form factors are essential. Overall, it is a versatile component for engineers seeking reliable power management solutions.

Features

The RSD050N10TL is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 100V, making it suitable for various power electronics applications.
2. Current Rating: Capable of handling continuous drain current (I_D) up to 50A, providing robust performance in demanding conditions.
3. R_DS(on): Exhibits a low on-resistance of around 10 mΩ, which minimizes power loss and enhances efficiency.
4. Fast Switching: Optimized for high-speed switching applications, reducing transition losses and improving overall system performance.
5. Package Type: Available in a TO-220 package, facilitating effective thermal management and easy integration into circuits.
6. Thermal Resistance: Features low thermal resistance, promoting better heat dissipation and reliability.
These attributes make the RSD050N10TL ideal for use in power supplies, motor drives, and other applications demanding high efficiency and robust performance.

Package

The RSD050N10TL is packaged in a TO-220 type package. This package is commonly used for power devices, providing good thermal performance and ease of mounting.

Pinout

The RSD050N10TL is a N-channel MOSFET with a pin count of 4. The pin configuration is as follows:
1. Gate (G): This is the control terminal for the MOSFET. Applying a voltage here allows the MOSFET to conduct between the Drain and Source.
2. Drain (D): This terminal is where the main current flows out of the MOSFET when it is turned on.
3. Source (S): This terminal is where the current enters the MOSFET when it is in the ON state.
4. Tab (T): This is typically used for heat dissipation and may also be connected to the Source in some packages.
The RSD050N10TL is designed for high-efficiency switching applications, featuring low on-resistance and fast switching capabilities, making it suitable for power management in various electronic circuits.

Manufacturer

The RSD050N10TL is manufactured by Rohm Semiconductor, a global company specializing in semiconductor and electronic components. Rohm is known for its production of integrated circuits, diodes, transistors, and other semiconductor devices used in a variety of applications, including automotive, consumer electronics, and industrial equipment. Established in 1958 and headquartered in Kyoto, Japan, Rohm operates internationally and is recognized for its innovation and quality in the semiconductor industry. The RSD050N10TL is a specific type of MOSFET, highlighting Rohm's expertise in power management solutions.

Application

The RSD050N10TL is a N-channel MOSFET commonly used in various applications, including power management systems, DC-DC converters, motor drives, and high-efficiency switching power supplies. Its low on-resistance and high-speed switching capabilities make it suitable for automotive, industrial, and consumer electronics applications, particularly in power conversion and energy-efficient designs.

Equivalent

The RSD050N10TL is a N-channel MOSFET. Equivalent products include the IRF3205, STP55NF06, and FQP50N06. Always check specific datasheets for exact specifications, including voltage, current ratings, and RDS(on) values, as well as package types to ensure compatibility.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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