RB520S30T5G

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RB520S30T5G

DIODE SCHOTTKY 30V 200MA SOD523

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  • Mfr. Partie #RB520S30T5G
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Spécifications

Part Status Active
Base Product Number RB520
Voltage - DC Reverse (Vr) (Max) 30 V
Current - Average Rectified (Io) 200mA
Voltage - Forward (Vf) (Max) @ If 600 mV @ 200 mA
Current - Reverse Leakage @ Vr 1 µA @ 10 V
Mounting Type Surface Mount
Package SC-79, SOD-523
Supplier Device Package SOD-523
Operating Temperature - Junction -55°C ~ 150°C
Packaging Cut Tape (CT), Tape & Reel (TR)
Technology Schottky
Speed Small Signal =< 200mA (Io), Any Speed

Vue d'ensemble

Description

The RB520S30T5G is a high-performance Schottky barrier rectifier designed for applications requiring efficient power conversion. With a voltage rating of 30V and a maximum current rating of 5A, it is ideal for use in power management, battery charging, and DC-DC converters.
This component features a low forward voltage drop, which minimizes energy loss and enhances system efficiency. Its fast switching capabilities make it suitable for high-frequency applications, reducing switching losses. The RB520S30T5G is housed in a compact package, facilitating easy integration into various electronic circuits.
Additionally, it boasts a wide operational temperature range, ensuring reliability in diverse environments. Its robust design is complemented by a high surge current rating, providing added durability for demanding applications. Overall, the RB520S30T5G is an excellent choice for engineers seeking efficient and reliable rectification solutions in modern electronic designs.

Features

The RB520S30T5G is a high-performance N-channel MOSFET designed for efficient power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 30V, suitable for low-voltage applications.
2. Current Rating: The maximum continuous drain current (ID) is rated at 52A, which allows for significant power handling.
3. RDS(on): It boasts a low on-resistance (RDS(on)) of around 5mΩ, minimizing conduction losses and enhancing efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (VGS(th)) is in the range of 1V to 2.5V, enabling easy interfacing with low-voltage control signals.
5. Package: It is typically available in a TO-220 or similar package, facilitating heat dissipation and ease of mounting.
6. Applications: Ideal for use in DC-DC converters, motor drives, power supplies, and other switching applications.
Overall, the RB520S30T5G is characterized by its robust performance, making it suitable for a variety of electronic systems requiring efficient power switching.

Package

The RB520S30T5G is packaged in a DPAK (TO-252) package type. This surface-mount package is designed for high-efficiency applications, providing a compact form factor suitable for power devices.

Pinout

The RB520S30T5G is a N-channel MOSFET designed for power management applications. It has a pin count of 5. The pin functions are as follows:
1. Gate (G): Controls the MOSFET's switching and enables or disables the device.
2. Drain (D): The terminal through which the load current enters the MOSFET.
3. Source (S): The terminal through which the load current exits the MOSFET.
4. Body (B): Internal connection to the source; typically not externally connected.
5. Protection Diode (if applicable): May provide flyback protection in certain configurations.
This MOSFET is commonly used in applications such as DC-DC converters, motor drivers, and power switches due to its efficient switching capabilities and low on-resistance.

Manufacturer

The RB520S30T5G is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor components, including power management solutions, analog devices, sensors, and integrated circuits. The company serves various industries such as automotive, telecommunications, consumer electronics, and industrial applications. They focus on providing energy-efficient solutions to support the growing demand for advanced technologies in sectors like Internet of Things (IoT), automotive electrification, and renewable energy. ON Semiconductor is recognized for its commitment to innovation and quality in the semiconductor market.

Application

The RB520S30T5G is a silicon carbide (SiC) Schottky diode primarily used in power electronics applications. Its key areas include electric vehicles, renewable energy systems (like solar inverters), industrial power supplies, and motor drives. It offers high efficiency, fast switching speeds, and thermal stability, making it suitable for demanding applications requiring reliable performance under high voltage and temperature conditions.

Equivalent

The RB520S30T5G chip is a voltage regulator. Equivalent products include the LM7805, LM317, and LM1117 series, depending on the specific requirements such as output voltage, current rating, and package type. For more precise compatibility, consider factors like dropout voltage and thermal performance. Always consult datasheets for specific applications.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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