PSMN4R8-100BSEJ

Les images sont à titre de référence seulement

PSMN4R8-100BSEJ

MOSFET N-CH 100V 120A D2PAK

100% original & Nouveau

24 heures prêtes à expédier

Garantie 365 jours

RFQ et Obtenez plus de rabais

Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 120A (Tj)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 4.8mOhm @ 25A, 10V
Vgs(th)(Max)@Id 4V @ 1mA
GateCharge(Qg)(Max)@Vgs 278 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 14400 pF @ 50 V
PowerDissipation(Max) 405W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D2PAK

Vue d'ensemble

Description

The PSMN4R8-100BSEJ is a N-channel MOSFET designed for high-efficiency power switching applications. It features a low on-resistance (RDS(on)) of 4.8 mΩ, allowing for reduced power losses and improved thermal performance. With a maximum continuous drain current of 100A and a voltage rating of 100V, it is suitable for various applications, including power supplies, motor drivers, and converters.
The device's fast switching capabilities make it ideal for high-frequency applications, while its TO-220 package ensures easy heat dissipation. Additionally, the PSMN4R8-100BSEJ is engineered for robustness, with a built-in gate protection feature.
Overall, its combination of low resistance, high current handling, and efficiency makes the PSMN4R8-100BSEJ a popular choice in modern electronic designs, helping to enhance performance, reliability, and energy efficiency in power management systems.

Features

The PSMN4R8-100BSEJ is a N-channel MOSFET designed for high-efficiency applications. Key features include:
- Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, suitable for various power applications.
- Continuous Drain Current: Provides up to 50A of continuous current, allowing for significant load handling.
- R_DS(on): Offers a low on-state resistance of approximately 4.8 mΩ, which minimizes conduction losses and enhances efficiency.
- Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, ensuring reliable operation with standard gate drive signals.
- Fast Switching Speed: High-speed switching capabilities for reduced switching losses in high-frequency applications.
- Package Type: Available in a TO-220 package, facilitating effective heat dissipation and ease of mounting.
Overall, the PSMN4R8-100BSEJ is ideal for use in power supplies, motor drives, and other applications where efficiency and thermal performance are critical.

Package

The PSMN4R8-100BSEJ is a Power MOSFET packaged in a TO-220 form factor. This type of package is designed for efficient heat dissipation and is commonly used in power applications.

Pinout

The PSMN4R8-100BSEJ is a N-channel MOSFET with a pin count of 8. It is commonly used in various power management applications. The pin functions are as follows:
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The terminal where the current flows out.
3. Source (S): The terminal where the current flows in.
4. Tab (T): Connected to the source for thermal dissipation (also part of the source).
5. Additional pins: These may be for specific variations or features such as body diode or other device functionalities.
This device is designed for high-efficiency applications, offering low on-resistance and fast switching capabilities.

Manufacturer

The PSMN4R8-100BSEJ is manufactured by Nexperia, a company specializing in semiconductor devices. Nexperia designs, produces, and provides a wide range of products, including discrete and analog components, logic devices, and MOSFETs, which are essential for various electronic applications. Founded in 2017 as a spin-off from NXP Semiconductors, Nexperia operates with a focus on high-performance components that are critical in automotive, industrial, and consumer electronics. The company's commitment to quality and efficiency positions it as a key player in the semiconductor industry.

Application

The PSMN4R8-100BSEJ is an N-channel MOSFET primarily used in power management applications, including DC-DC converters, motor drives, and power switching circuits. Its high efficiency and low on-resistance make it suitable for consumer electronics, automotive applications, and renewable energy systems, such as solar inverters. Additionally, it is utilized in industrial automation and LED driver circuits.

Equivalent

The PSMN4R8-100BSEJ is an N-channel MOSFET with low RDS(on). Equivalent products include the IRF3205, STP75NF75, and FQP75N06. Ensure to check specifications such as voltage rating, current capacity, and RDS(on) for compatibility in your application.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

Similaire